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Engineering optoelectronic properties in gallium oxide/gallium nitride heterostructures via post-rapid thermal annealing temperature modulation.

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Title: Engineering optoelectronic properties in gallium oxide/gallium nitride heterostructures via post-rapid thermal annealing temperature modulation.
Authors: Muhammad, A.1,2 (AUTHOR), Ng, S.S.1 (AUTHOR) shashiong@usm.my, Quah, H.J.1 (AUTHOR), Hamzah, N.A.1 (AUTHOR), Abutawahina, Momin S.M.1 (AUTHOR)
Source: Ceramics International. May2026:Part A, Vol. 52 Issue 13, p20956-20973. 18p.
Subjects: Heterostructures, Rapid thermal processing, Electron beams, Optoelectronics, Gallium nitride, Thin films, Gallium
Abstract: The study investigates the influence of post-rapid thermal annealing (PRTA) on the morphological, structural, and optoelectronic properties of β-Ga 2 O 3 /GaN heterostructures. β-Ga 2 O 3 films were deposited on GaN/sapphire substrates by electron beam evaporation and annealed at temperatures ranging from 700 to 900 °C. Atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM) analyses indicate that annealing at 800 °C yielded the smoothest surface. X-ray diffraction (XRD) results corroborate this observation, demonstrating enhanced crystallinity, as evidenced by the lowest full width at half maximum (FWHM), strain, and dislocation density at this temperature. Furthermore, optical analysis reveals improvements in absorption, refractive index, and mobility at 800 °C, accompanied by decreased resistivity and sheet resistance. These findings underscore that a controlled PRTA significantly enhances the quality of β-Ga 2 O 3 /GaN films, positioning them as promising candidates for advanced optoelectronic device applications. [ABSTRACT FROM AUTHOR]
Copyright of Ceramics International is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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DbLabel: Engineering Source
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  Data: Engineering optoelectronic properties in gallium oxide/gallium nitride heterostructures via post-rapid thermal annealing temperature modulation.
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  Data: <searchLink fieldCode="JN" term="%22Ceramics+International%22">Ceramics International</searchLink>. May2026:Part A, Vol. 52 Issue 13, p20956-20973. 18p.
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  Data: <searchLink fieldCode="DE" term="%22Heterostructures%22">Heterostructures</searchLink><br /><searchLink fieldCode="DE" term="%22Rapid+thermal+processing%22">Rapid thermal processing</searchLink><br /><searchLink fieldCode="DE" term="%22Electron+beams%22">Electron beams</searchLink><br /><searchLink fieldCode="DE" term="%22Optoelectronics%22">Optoelectronics</searchLink><br /><searchLink fieldCode="DE" term="%22Gallium+nitride%22">Gallium nitride</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Gallium%22">Gallium</searchLink>
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  Data: The study investigates the influence of post-rapid thermal annealing (PRTA) on the morphological, structural, and optoelectronic properties of β-Ga 2 O 3 /GaN heterostructures. β-Ga 2 O 3 films were deposited on GaN/sapphire substrates by electron beam evaporation and annealed at temperatures ranging from 700 to 900 °C. Atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM) analyses indicate that annealing at 800 °C yielded the smoothest surface. X-ray diffraction (XRD) results corroborate this observation, demonstrating enhanced crystallinity, as evidenced by the lowest full width at half maximum (FWHM), strain, and dislocation density at this temperature. Furthermore, optical analysis reveals improvements in absorption, refractive index, and mobility at 800 °C, accompanied by decreased resistivity and sheet resistance. These findings underscore that a controlled PRTA significantly enhances the quality of β-Ga 2 O 3 /GaN films, positioning them as promising candidates for advanced optoelectronic device applications. [ABSTRACT FROM AUTHOR]
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  Data: <i>Copyright of Ceramics International is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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        Value: 10.1016/j.ceramint.2026.03.180
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      – Code: eng
        Text: English
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        PageCount: 18
        StartPage: 20956
    Subjects:
      – SubjectFull: Heterostructures
        Type: general
      – SubjectFull: Rapid thermal processing
        Type: general
      – SubjectFull: Electron beams
        Type: general
      – SubjectFull: Optoelectronics
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      – SubjectFull: Gallium nitride
        Type: general
      – SubjectFull: Thin films
        Type: general
      – SubjectFull: Gallium
        Type: general
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      – TitleFull: Engineering optoelectronic properties in gallium oxide/gallium nitride heterostructures via post-rapid thermal annealing temperature modulation.
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              Text: May2026:Part A
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