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Flexible memory devices using Ti-Zn-Sb nanoscale thin film for nonvolatile data storage and wearable electronics.

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Title: Flexible memory devices using Ti-Zn-Sb nanoscale thin film for nonvolatile data storage and wearable electronics.
Authors: Fu, Bowen1 (AUTHOR), Wu, Weihua1,2,3 (AUTHOR) wwh@jsut.edu.cn, Zhang, Pei1 (AUTHOR), Zhou, Zhengquan1 (AUTHOR), Li, Yu1 (AUTHOR), Yong, Kangle2 (AUTHOR), Fan, Xiwen4 (AUTHOR)
Source: Ceramics International. May2026:Part A, Vol. 52 Issue 13, p21848-21857. 10p.
Subjects: Phase change memory, Thin films, Biocompatibility, Wearable technology, Nanofilms, Mechanical behavior of materials, Nonvolatile memory
Abstract: Memory devices serve as a fundamental and necessary element in inflexible electronics, which can achieve data storage, processing and radio frequency communication. Among various emerging memory technologies, phase change memory is currently one of the most competitive candidates for next-generation nonvolatile memory, which is primarily due to its extended cycle life, rapid read/write speed, and excellent scalability. This work focuses on the physical properties, crystallization mechanism and flexible application of nanocomposite Ti-doped Zn 15 Sb 85 film from the experimental and theoretical perspective. The incorporation of Ti effectively reduces the grain size, thereby decreasing the elastic modulus and deformation resistance of the film. These improvements are crucial for maintaining stable physical properties of the film after undergoing bending tests up to 100 K times. Phase change memory based on Ti 0.01 (Zn 15 Sb 85) 0.99 was prepared by standard CMOS technology, and the SET/RESET operations between high resistance and low resistance can be achieved under an electrical pulse duration of 50 ns. Besides, first-principles calculations reveal that adding Ti can reduce the elastic modulus of Zn 15 Sb 85 film, indicating increased mechanical strength. Moreover, differential charge-density analysis reveals that Ti forms strong bonds with Sb, enhancing the thermal stability of the films. Furthermore, the standardized skin sensitization and irritation tests confirm that the Ti-Zn-Sb material is biocompatible and does not induce sensitization. All the results proved that Ti-Zn-Sb materials have the great potential for the high-performance flexible memory application. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
Description
Abstract:Memory devices serve as a fundamental and necessary element in inflexible electronics, which can achieve data storage, processing and radio frequency communication. Among various emerging memory technologies, phase change memory is currently one of the most competitive candidates for next-generation nonvolatile memory, which is primarily due to its extended cycle life, rapid read/write speed, and excellent scalability. This work focuses on the physical properties, crystallization mechanism and flexible application of nanocomposite Ti-doped Zn 15 Sb 85 film from the experimental and theoretical perspective. The incorporation of Ti effectively reduces the grain size, thereby decreasing the elastic modulus and deformation resistance of the film. These improvements are crucial for maintaining stable physical properties of the film after undergoing bending tests up to 100 K times. Phase change memory based on Ti 0.01 (Zn 15 Sb 85) 0.99 was prepared by standard CMOS technology, and the SET/RESET operations between high resistance and low resistance can be achieved under an electrical pulse duration of 50 ns. Besides, first-principles calculations reveal that adding Ti can reduce the elastic modulus of Zn 15 Sb 85 film, indicating increased mechanical strength. Moreover, differential charge-density analysis reveals that Ti forms strong bonds with Sb, enhancing the thermal stability of the films. Furthermore, the standardized skin sensitization and irritation tests confirm that the Ti-Zn-Sb material is biocompatible and does not induce sensitization. All the results proved that Ti-Zn-Sb materials have the great potential for the high-performance flexible memory application. [ABSTRACT FROM AUTHOR]
ISSN:02728842
DOI:10.1016/j.ceramint.2026.03.257