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Flexible memory devices using Ti-Zn-Sb nanoscale thin film for nonvolatile data storage and wearable electronics.

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Title: Flexible memory devices using Ti-Zn-Sb nanoscale thin film for nonvolatile data storage and wearable electronics.
Authors: Fu, Bowen1 (AUTHOR), Wu, Weihua1,2,3 (AUTHOR) wwh@jsut.edu.cn, Zhang, Pei1 (AUTHOR), Zhou, Zhengquan1 (AUTHOR), Li, Yu1 (AUTHOR), Yong, Kangle2 (AUTHOR), Fan, Xiwen4 (AUTHOR)
Source: Ceramics International. May2026:Part A, Vol. 52 Issue 13, p21848-21857. 10p.
Subjects: Phase change memory, Thin films, Biocompatibility, Wearable technology, Nanofilms, Mechanical behavior of materials, Nonvolatile memory
Abstract: Memory devices serve as a fundamental and necessary element in inflexible electronics, which can achieve data storage, processing and radio frequency communication. Among various emerging memory technologies, phase change memory is currently one of the most competitive candidates for next-generation nonvolatile memory, which is primarily due to its extended cycle life, rapid read/write speed, and excellent scalability. This work focuses on the physical properties, crystallization mechanism and flexible application of nanocomposite Ti-doped Zn 15 Sb 85 film from the experimental and theoretical perspective. The incorporation of Ti effectively reduces the grain size, thereby decreasing the elastic modulus and deformation resistance of the film. These improvements are crucial for maintaining stable physical properties of the film after undergoing bending tests up to 100 K times. Phase change memory based on Ti 0.01 (Zn 15 Sb 85) 0.99 was prepared by standard CMOS technology, and the SET/RESET operations between high resistance and low resistance can be achieved under an electrical pulse duration of 50 ns. Besides, first-principles calculations reveal that adding Ti can reduce the elastic modulus of Zn 15 Sb 85 film, indicating increased mechanical strength. Moreover, differential charge-density analysis reveals that Ti forms strong bonds with Sb, enhancing the thermal stability of the films. Furthermore, the standardized skin sensitization and irritation tests confirm that the Ti-Zn-Sb material is biocompatible and does not induce sensitization. All the results proved that Ti-Zn-Sb materials have the great potential for the high-performance flexible memory application. [ABSTRACT FROM AUTHOR]
Copyright of Ceramics International is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 193683663
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  Data: Flexible memory devices using Ti-Zn-Sb nanoscale thin film for nonvolatile data storage and wearable electronics.
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  Data: <searchLink fieldCode="JN" term="%22Ceramics+International%22">Ceramics International</searchLink>. May2026:Part A, Vol. 52 Issue 13, p21848-21857. 10p.
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  Data: Memory devices serve as a fundamental and necessary element in inflexible electronics, which can achieve data storage, processing and radio frequency communication. Among various emerging memory technologies, phase change memory is currently one of the most competitive candidates for next-generation nonvolatile memory, which is primarily due to its extended cycle life, rapid read/write speed, and excellent scalability. This work focuses on the physical properties, crystallization mechanism and flexible application of nanocomposite Ti-doped Zn 15 Sb 85 film from the experimental and theoretical perspective. The incorporation of Ti effectively reduces the grain size, thereby decreasing the elastic modulus and deformation resistance of the film. These improvements are crucial for maintaining stable physical properties of the film after undergoing bending tests up to 100 K times. Phase change memory based on Ti 0.01 (Zn 15 Sb 85) 0.99 was prepared by standard CMOS technology, and the SET/RESET operations between high resistance and low resistance can be achieved under an electrical pulse duration of 50 ns. Besides, first-principles calculations reveal that adding Ti can reduce the elastic modulus of Zn 15 Sb 85 film, indicating increased mechanical strength. Moreover, differential charge-density analysis reveals that Ti forms strong bonds with Sb, enhancing the thermal stability of the films. Furthermore, the standardized skin sensitization and irritation tests confirm that the Ti-Zn-Sb material is biocompatible and does not induce sensitization. All the results proved that Ti-Zn-Sb materials have the great potential for the high-performance flexible memory application. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
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  Data: <i>Copyright of Ceramics International is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – Type: doi
        Value: 10.1016/j.ceramint.2026.03.257
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        Text: English
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        StartPage: 21848
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        Type: general
      – SubjectFull: Thin films
        Type: general
      – SubjectFull: Biocompatibility
        Type: general
      – SubjectFull: Wearable technology
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      – SubjectFull: Nanofilms
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      – SubjectFull: Mechanical behavior of materials
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      – SubjectFull: Nonvolatile memory
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      – TitleFull: Flexible memory devices using Ti-Zn-Sb nanoscale thin film for nonvolatile data storage and wearable electronics.
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            NameFull: Fu, Bowen
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              M: 05
              Text: May2026:Part A
              Type: published
              Y: 2026
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