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Fabrication of Low-Resistance Ru Films by Sputtering in Ar or Kr and Gas Backscattering Behavior.

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Title: Fabrication of Low-Resistance Ru Films by Sputtering in Ar or Kr and Gas Backscattering Behavior.
Authors: Yokoyama, Yamato1 (AUTHOR), Kawamura, Midori1 (AUTHOR) kawamumd@mail.kitami-it.ac.jp, Kiba, Takayuki1 (AUTHOR)
Source: Journal of Electronic Materials. Jun2026, Vol. 55 Issue 6, p4926-4931. 6p.
Subjects: Sputtering (Physics), Backscattering, Krypton, Computer simulation, Thin films, Thin film devices, Electrical resistivity, Argon
Abstract: Owing to the resistivity size effect of Cu interconnects, an alternative material has been explored. Ruthenium (Ru) is a promising candidate, and the sputtering method is expected to produce low-resistance films. Previously, we obtained Ag films with lower resistance using Kr when compared with Ar. Through microanalysis of the films, we also found that Ar was trapped in the film but Kr was not. Based on this finding, we fabricated Ru films, which have a mass number close to that of Ag, by sputtering either in Ar or Kr gas. As a result, Ru films with low electrical resistivity are obtained either using Ar or Kr gas. Then we estimate the energy distribution of backscattered gases from the targets using Stopping and Range of Ions in Matter (SRIM) simulations. The results reveal that the maximum backscattering energy of Ar from Ru target (130 eV) is much lower than that of Ar over an Ag target (230 eV) and comparable with that of Kr over the Ag target (120 eV). Therefore, Ru films show low resistivity without gas trapping owing to the relatively low backscattering energy. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
Description
Abstract:Owing to the resistivity size effect of Cu interconnects, an alternative material has been explored. Ruthenium (Ru) is a promising candidate, and the sputtering method is expected to produce low-resistance films. Previously, we obtained Ag films with lower resistance using Kr when compared with Ar. Through microanalysis of the films, we also found that Ar was trapped in the film but Kr was not. Based on this finding, we fabricated Ru films, which have a mass number close to that of Ag, by sputtering either in Ar or Kr gas. As a result, Ru films with low electrical resistivity are obtained either using Ar or Kr gas. Then we estimate the energy distribution of backscattered gases from the targets using Stopping and Range of Ions in Matter (SRIM) simulations. The results reveal that the maximum backscattering energy of Ar from Ru target (130 eV) is much lower than that of Ar over an Ag target (230 eV) and comparable with that of Kr over the Ag target (120 eV). Therefore, Ru films show low resistivity without gas trapping owing to the relatively low backscattering energy. [ABSTRACT FROM AUTHOR]
ISSN:03615235
DOI:10.1007/s11664-026-12846-6