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Fabrication of Low-Resistance Ru Films by Sputtering in Ar or Kr and Gas Backscattering Behavior.

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Title: Fabrication of Low-Resistance Ru Films by Sputtering in Ar or Kr and Gas Backscattering Behavior.
Authors: Yokoyama, Yamato1 (AUTHOR), Kawamura, Midori1 (AUTHOR) kawamumd@mail.kitami-it.ac.jp, Kiba, Takayuki1 (AUTHOR)
Source: Journal of Electronic Materials. Jun2026, Vol. 55 Issue 6, p4926-4931. 6p.
Subjects: Sputtering (Physics), Backscattering, Krypton, Computer simulation, Thin films, Thin film devices, Electrical resistivity, Argon
Abstract: Owing to the resistivity size effect of Cu interconnects, an alternative material has been explored. Ruthenium (Ru) is a promising candidate, and the sputtering method is expected to produce low-resistance films. Previously, we obtained Ag films with lower resistance using Kr when compared with Ar. Through microanalysis of the films, we also found that Ar was trapped in the film but Kr was not. Based on this finding, we fabricated Ru films, which have a mass number close to that of Ag, by sputtering either in Ar or Kr gas. As a result, Ru films with low electrical resistivity are obtained either using Ar or Kr gas. Then we estimate the energy distribution of backscattered gases from the targets using Stopping and Range of Ions in Matter (SRIM) simulations. The results reveal that the maximum backscattering energy of Ar from Ru target (130 eV) is much lower than that of Ar over an Ag target (230 eV) and comparable with that of Kr over the Ag target (120 eV). Therefore, Ru films show low resistivity without gas trapping owing to the relatively low backscattering energy. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 193685044
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Label: Title
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  Data: Fabrication of Low-Resistance Ru Films by Sputtering in Ar or Kr and Gas Backscattering Behavior.
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  Data: <searchLink fieldCode="AR" term="%22Yokoyama%2C+Yamato%22">Yokoyama, Yamato</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kawamura%2C+Midori%22">Kawamura, Midori</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> kawamumd@mail.kitami-it.ac.jp</i><br /><searchLink fieldCode="AR" term="%22Kiba%2C+Takayuki%22">Kiba, Takayuki</searchLink><relatesTo>1</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>. Jun2026, Vol. 55 Issue 6, p4926-4931. 6p.
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  Data: <searchLink fieldCode="DE" term="%22Sputtering+%28Physics%29%22">Sputtering (Physics)</searchLink><br /><searchLink fieldCode="DE" term="%22Backscattering%22">Backscattering</searchLink><br /><searchLink fieldCode="DE" term="%22Krypton%22">Krypton</searchLink><br /><searchLink fieldCode="DE" term="%22Computer+simulation%22">Computer simulation</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+film+devices%22">Thin film devices</searchLink><br /><searchLink fieldCode="DE" term="%22Electrical+resistivity%22">Electrical resistivity</searchLink><br /><searchLink fieldCode="DE" term="%22Argon%22">Argon</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Owing to the resistivity size effect of Cu interconnects, an alternative material has been explored. Ruthenium (Ru) is a promising candidate, and the sputtering method is expected to produce low-resistance films. Previously, we obtained Ag films with lower resistance using Kr when compared with Ar. Through microanalysis of the films, we also found that Ar was trapped in the film but Kr was not. Based on this finding, we fabricated Ru films, which have a mass number close to that of Ag, by sputtering either in Ar or Kr gas. As a result, Ru films with low electrical resistivity are obtained either using Ar or Kr gas. Then we estimate the energy distribution of backscattered gases from the targets using Stopping and Range of Ions in Matter (SRIM) simulations. The results reveal that the maximum backscattering energy of Ar from Ru target (130 eV) is much lower than that of Ar over an Ag target (230 eV) and comparable with that of Kr over the Ag target (120 eV). Therefore, Ru films show low resistivity without gas trapping owing to the relatively low backscattering energy. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1007/s11664-026-12846-6
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 6
        StartPage: 4926
    Subjects:
      – SubjectFull: Sputtering (Physics)
        Type: general
      – SubjectFull: Backscattering
        Type: general
      – SubjectFull: Krypton
        Type: general
      – SubjectFull: Computer simulation
        Type: general
      – SubjectFull: Thin films
        Type: general
      – SubjectFull: Thin film devices
        Type: general
      – SubjectFull: Electrical resistivity
        Type: general
      – SubjectFull: Argon
        Type: general
    Titles:
      – TitleFull: Fabrication of Low-Resistance Ru Films by Sputtering in Ar or Kr and Gas Backscattering Behavior.
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          Name:
            NameFull: Yokoyama, Yamato
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            NameFull: Kawamura, Midori
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          Name:
            NameFull: Kiba, Takayuki
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            – D: 01
              M: 06
              Text: Jun2026
              Type: published
              Y: 2026
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