Influence of Rapid Thermal Annealing (RTA) on the Properties of Indium Oxide Nanostructures.
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| Title: | Influence of Rapid Thermal Annealing (RTA) on the Properties of Indium Oxide Nanostructures. |
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| Authors: | Matei, Alina1 (AUTHOR) cosmin.romanitan@imt.ro, Romanițan, Cosmin1 (AUTHOR), Mihalache, Iuliana1 (AUTHOR), Brîncoveanu, Oana1 (AUTHOR), Țucureanu, Vasilica (AUTHOR) vasilica.tucureanu@imt.ro |
| Source: | Nanomaterials (2079-4991). May2026, Vol. 16 Issue 9, p506. 19p. |
| Subjects: | Rapid thermal processing, Nanoparticles, Crystal structure, Wetting, Optical properties, Thin films, Nanostructured materials, Surface structure |
| Abstract: | In the present paper, In2O3 NPs were synthesized by a wet-chemical method, in the absence and presence of the surfactant, and deposited as thin films on silicon substrates. After deposition, the films were subjected to rapid thermal annealing (RTA) at 550 °C, 750 °C, and 900 °C, for 300 s, under an inert atmosphere. The correlation between the morphological, structural, and optical characteristics, the wetting capacity of In2O3 films synthesized under different synthesis conditions, and the influence of the RTA treatment are presented. The vibrations of In-O bonds for In2O3 samples were confirmed using FTIR spectroscopy. Structural analysis shows that In2O3 NPs have a cubic crystalline structure, but with the increase in temperature at 900 °C, diffraction peaks characteristic of the tetragonal phase of indium appear, correlated with a decrease in lattice parameters, as a result of the crystallinity. The morphology of the In2O3 samples was studied by SEM, revealing predominantly spherical and uniformly distributed particles with nanometric sizes. The absorption spectra of the In2O3 NPs showed peaks in the ultraviolet region, and the high energy bandgap value of the In2O3 films varied between 3.28 and 4.33 eV, depending on the samples and RTA treatment. The contact angle measurements of In2O3 films determined the wetting capacity of the surface, reflecting changes in surface morphology and structure induced by the RTA process. The results suggest that In2O3 thin films with spherical nanoparticles, good wettability, and percolation can be used for the development of sensors with increased selectivity and sensitivity. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | In the present paper, In2O3 NPs were synthesized by a wet-chemical method, in the absence and presence of the surfactant, and deposited as thin films on silicon substrates. After deposition, the films were subjected to rapid thermal annealing (RTA) at 550 °C, 750 °C, and 900 °C, for 300 s, under an inert atmosphere. The correlation between the morphological, structural, and optical characteristics, the wetting capacity of In2O3 films synthesized under different synthesis conditions, and the influence of the RTA treatment are presented. The vibrations of In-O bonds for In2O3 samples were confirmed using FTIR spectroscopy. Structural analysis shows that In2O3 NPs have a cubic crystalline structure, but with the increase in temperature at 900 °C, diffraction peaks characteristic of the tetragonal phase of indium appear, correlated with a decrease in lattice parameters, as a result of the crystallinity. The morphology of the In2O3 samples was studied by SEM, revealing predominantly spherical and uniformly distributed particles with nanometric sizes. The absorption spectra of the In2O3 NPs showed peaks in the ultraviolet region, and the high energy bandgap value of the In2O3 films varied between 3.28 and 4.33 eV, depending on the samples and RTA treatment. The contact angle measurements of In2O3 films determined the wetting capacity of the surface, reflecting changes in surface morphology and structure induced by the RTA process. The results suggest that In2O3 thin films with spherical nanoparticles, good wettability, and percolation can be used for the development of sensors with increased selectivity and sensitivity. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 20794991 |
| DOI: | 10.3390/nano16090506 |
