FROM SYSTEM ZAP TO SILICON IMPROVEMENT: ADVANCED FAULT ISOLATION OF USB2 ELECTROSTATIC DISCHARGE FAILURES.

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Bibliographic Details
Title:	FROM SYSTEM ZAP TO SILICON IMPROVEMENT: ADVANCED FAULT ISOLATION OF USB2 ELECTROSTATIC DISCHARGE FAILURES.
Authors:	Kachare, Omkar Rajesh¹ omkar.kachare@intel.com
Source:	Electronic Device Failure Analysis. May2026, Vol. 28 Issue 2, p32-40. 8p.
Subjects:	Electrostatic discharges, Fault diagnosis, Scientific method, Semiconductor devices, USB technology, Reliability of electronics, Integrated circuits
Abstract:	The article focuses on improving the identification of electrical defects in increasingly complex semiconductor devices to ensure long-term reliability at the silicon level. Topics include the use of advanced universal fault isolation techniques, the challenges of diagnosing defects in highly complex semiconductor structures, and the importance of enhancing analytical methods to support reliable chip performance.
Database:	Engineering Source

Description
Abstract:	The article focuses on improving the identification of electrical defects in increasingly complex semiconductor devices to ensure long-term reliability at the silicon level. Topics include the use of advanced universal fault isolation techniques, the challenges of diagnosing defects in highly complex semiconductor structures, and the importance of enhancing analytical methods to support reliable chip performance.
ISSN:	15370755