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FROM SYSTEM ZAP TO SILICON IMPROVEMENT: ADVANCED FAULT ISOLATION OF USB2 ELECTROSTATIC DISCHARGE FAILURES.

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Title: FROM SYSTEM ZAP TO SILICON IMPROVEMENT: ADVANCED FAULT ISOLATION OF USB2 ELECTROSTATIC DISCHARGE FAILURES.
Authors: Kachare, Omkar Rajesh1 omkar.kachare@intel.com
Source: Electronic Device Failure Analysis. May2026, Vol. 28 Issue 2, p32-40. 8p.
Subjects: Electrostatic discharges, Fault diagnosis, Scientific method, Semiconductor devices, USB technology, Reliability of electronics, Integrated circuits
Abstract: The article focuses on improving the identification of electrical defects in increasingly complex semiconductor devices to ensure long-term reliability at the silicon level. Topics include the use of advanced universal fault isolation techniques, the challenges of diagnosing defects in highly complex semiconductor structures, and the importance of enhancing analytical methods to support reliable chip performance.
Database: Engineering Source
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DbLabel: Engineering Source
An: 193736296
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PubType: Academic Journal
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  Data: FROM SYSTEM ZAP TO SILICON IMPROVEMENT: ADVANCED FAULT ISOLATION OF USB2 ELECTROSTATIC DISCHARGE FAILURES.
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  Data: <searchLink fieldCode="AR" term="%22Kachare%2C+Omkar+Rajesh%22">Kachare, Omkar Rajesh</searchLink><relatesTo>1</relatesTo><i> omkar.kachare@intel.com</i>
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  Data: <searchLink fieldCode="JN" term="%22Electronic+Device+Failure+Analysis%22">Electronic Device Failure Analysis</searchLink>. May2026, Vol. 28 Issue 2, p32-40. 8p.
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  Data: <searchLink fieldCode="DE" term="%22Electrostatic+discharges%22">Electrostatic discharges</searchLink><br /><searchLink fieldCode="DE" term="%22Fault+diagnosis%22">Fault diagnosis</searchLink><br /><searchLink fieldCode="DE" term="%22Scientific+method%22">Scientific method</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+devices%22">Semiconductor devices</searchLink><br /><searchLink fieldCode="DE" term="%22USB+technology%22">USB technology</searchLink><br /><searchLink fieldCode="DE" term="%22Reliability+of+electronics%22">Reliability of electronics</searchLink><br /><searchLink fieldCode="DE" term="%22Integrated+circuits%22">Integrated circuits</searchLink>
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  Data: The article focuses on improving the identification of electrical defects in increasingly complex semiconductor devices to ensure long-term reliability at the silicon level. Topics include the use of advanced universal fault isolation techniques, the challenges of diagnosing defects in highly complex semiconductor structures, and the importance of enhancing analytical methods to support reliable chip performance.
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=193736296
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      – Code: eng
        Text: English
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        PageCount: 8
        StartPage: 32
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      – SubjectFull: Electrostatic discharges
        Type: general
      – SubjectFull: Fault diagnosis
        Type: general
      – SubjectFull: Scientific method
        Type: general
      – SubjectFull: Semiconductor devices
        Type: general
      – SubjectFull: USB technology
        Type: general
      – SubjectFull: Reliability of electronics
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      – SubjectFull: Integrated circuits
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      – TitleFull: FROM SYSTEM ZAP TO SILICON IMPROVEMENT: ADVANCED FAULT ISOLATION OF USB2 ELECTROSTATIC DISCHARGE FAILURES.
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            – D: 01
              M: 05
              Text: May2026
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              Y: 2026
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