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Controlled growth of SiC whiskers through nucleation site engineering using AlCl3-Activated carbon felt.

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Title: Controlled growth of SiC whiskers through nucleation site engineering using AlCl3-Activated carbon felt.
Authors: Lin, Fang1,2,3 (AUTHOR), Zhang, Kai1,3 (AUTHOR), Zhang, Ming1,3 (AUTHOR) mingzhang@fjirsm.ac.cn, Lin, Yueying1,3,4 (AUTHOR), Yang, Zhilu1,3,4 (AUTHOR), Wang, Jieyuan1,3,4 (AUTHOR), Li, Junwei1,3,4 (AUTHOR), Cai, Xiaokang5 (AUTHOR), Liu, Chao1,5 (AUTHOR) liu.chao@cxtc.com, Shen, Zhongrong1,2,3 (AUTHOR) z-shen@fjirsm.ac.cn
Source: Ceramics International. May2026:Part A, Vol. 52 Issue 12, p18438-18445. 8p.
Subjects: Heterogenous nucleation, Aluminum chloride, Surface interactions, Crystal whiskers, Crystal growth, Ceramic-matrix composites
Abstract: The controlled synthesis of silicon carbide whiskers (SiCw) with tunable aspect ratios is essential for improving the fracture toughness of ceramic matrix composites. However, conventional transition-metal-catalyzed routes are often limited by metallic contamination and insufficient morphological control. Here, a mechanism-driven strategy based on interfacial engineering of carbon felt using AlCl 3 as an activator is proposed to overcome these challenges. AlCl 3 reconstructs the carbon surface to form a strongly bonded C–Al interfacial layer enriched with structural defects, which serve as thermodynamically favorable heterogeneous nucleation sites and enable regulation of nucleation density. Systematic optimization identifies an optimal AlCl 3 loading of 5 wt% and a precursor ball-milling time of ≥5.5 h, under which a dual-regulation mechanism promotes vapor–solid growth of high-purity SiCw with smooth surfaces and controllable aspect ratios ranging from 10 to 100. This interfacial chemistry-dominated approach provides a scalable and cost-effective route for high-quality SiCw production and establishes an alternative growth paradigm beyond conventional metal-catalyzed systems. [Display omitted] [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
Description
Abstract:The controlled synthesis of silicon carbide whiskers (SiCw) with tunable aspect ratios is essential for improving the fracture toughness of ceramic matrix composites. However, conventional transition-metal-catalyzed routes are often limited by metallic contamination and insufficient morphological control. Here, a mechanism-driven strategy based on interfacial engineering of carbon felt using AlCl 3 as an activator is proposed to overcome these challenges. AlCl 3 reconstructs the carbon surface to form a strongly bonded C–Al interfacial layer enriched with structural defects, which serve as thermodynamically favorable heterogeneous nucleation sites and enable regulation of nucleation density. Systematic optimization identifies an optimal AlCl 3 loading of 5 wt% and a precursor ball-milling time of ≥5.5 h, under which a dual-regulation mechanism promotes vapor–solid growth of high-purity SiCw with smooth surfaces and controllable aspect ratios ranging from 10 to 100. This interfacial chemistry-dominated approach provides a scalable and cost-effective route for high-quality SiCw production and establishes an alternative growth paradigm beyond conventional metal-catalyzed systems. [Display omitted] [ABSTRACT FROM AUTHOR]
ISSN:02728842
DOI:10.1016/j.ceramint.2026.02.406