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Controlled growth of SiC whiskers through nucleation site engineering using AlCl3-Activated carbon felt.

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Title: Controlled growth of SiC whiskers through nucleation site engineering using AlCl3-Activated carbon felt.
Authors: Lin, Fang1,2,3 (AUTHOR), Zhang, Kai1,3 (AUTHOR), Zhang, Ming1,3 (AUTHOR) mingzhang@fjirsm.ac.cn, Lin, Yueying1,3,4 (AUTHOR), Yang, Zhilu1,3,4 (AUTHOR), Wang, Jieyuan1,3,4 (AUTHOR), Li, Junwei1,3,4 (AUTHOR), Cai, Xiaokang5 (AUTHOR), Liu, Chao1,5 (AUTHOR) liu.chao@cxtc.com, Shen, Zhongrong1,2,3 (AUTHOR) z-shen@fjirsm.ac.cn
Source: Ceramics International. May2026:Part A, Vol. 52 Issue 12, p18438-18445. 8p.
Subjects: Heterogenous nucleation, Aluminum chloride, Surface interactions, Crystal whiskers, Crystal growth, Ceramic-matrix composites
Abstract: The controlled synthesis of silicon carbide whiskers (SiCw) with tunable aspect ratios is essential for improving the fracture toughness of ceramic matrix composites. However, conventional transition-metal-catalyzed routes are often limited by metallic contamination and insufficient morphological control. Here, a mechanism-driven strategy based on interfacial engineering of carbon felt using AlCl 3 as an activator is proposed to overcome these challenges. AlCl 3 reconstructs the carbon surface to form a strongly bonded C–Al interfacial layer enriched with structural defects, which serve as thermodynamically favorable heterogeneous nucleation sites and enable regulation of nucleation density. Systematic optimization identifies an optimal AlCl 3 loading of 5 wt% and a precursor ball-milling time of ≥5.5 h, under which a dual-regulation mechanism promotes vapor–solid growth of high-purity SiCw with smooth surfaces and controllable aspect ratios ranging from 10 to 100. This interfacial chemistry-dominated approach provides a scalable and cost-effective route for high-quality SiCw production and establishes an alternative growth paradigm beyond conventional metal-catalyzed systems. [Display omitted] [ABSTRACT FROM AUTHOR]
Copyright of Ceramics International is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 193756252
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Controlled growth of SiC whiskers through nucleation site engineering using AlCl3-Activated carbon felt.
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  Data: <searchLink fieldCode="JN" term="%22Ceramics+International%22">Ceramics International</searchLink>. May2026:Part A, Vol. 52 Issue 12, p18438-18445. 8p.
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  Data: <searchLink fieldCode="DE" term="%22Heterogenous+nucleation%22">Heterogenous nucleation</searchLink><br /><searchLink fieldCode="DE" term="%22Aluminum+chloride%22">Aluminum chloride</searchLink><br /><searchLink fieldCode="DE" term="%22Surface+interactions%22">Surface interactions</searchLink><br /><searchLink fieldCode="DE" term="%22Crystal+whiskers%22">Crystal whiskers</searchLink><br /><searchLink fieldCode="DE" term="%22Crystal+growth%22">Crystal growth</searchLink><br /><searchLink fieldCode="DE" term="%22Ceramic-matrix+composites%22">Ceramic-matrix composites</searchLink>
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  Data: The controlled synthesis of silicon carbide whiskers (SiCw) with tunable aspect ratios is essential for improving the fracture toughness of ceramic matrix composites. However, conventional transition-metal-catalyzed routes are often limited by metallic contamination and insufficient morphological control. Here, a mechanism-driven strategy based on interfacial engineering of carbon felt using AlCl 3 as an activator is proposed to overcome these challenges. AlCl 3 reconstructs the carbon surface to form a strongly bonded C–Al interfacial layer enriched with structural defects, which serve as thermodynamically favorable heterogeneous nucleation sites and enable regulation of nucleation density. Systematic optimization identifies an optimal AlCl 3 loading of 5 wt% and a precursor ball-milling time of ≥5.5 h, under which a dual-regulation mechanism promotes vapor–solid growth of high-purity SiCw with smooth surfaces and controllable aspect ratios ranging from 10 to 100. This interfacial chemistry-dominated approach provides a scalable and cost-effective route for high-quality SiCw production and establishes an alternative growth paradigm beyond conventional metal-catalyzed systems. [Display omitted] [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
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  Data: <i>Copyright of Ceramics International is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1016/j.ceramint.2026.02.406
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      – Code: eng
        Text: English
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        StartPage: 18438
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      – SubjectFull: Heterogenous nucleation
        Type: general
      – SubjectFull: Aluminum chloride
        Type: general
      – SubjectFull: Surface interactions
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      – SubjectFull: Crystal whiskers
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      – SubjectFull: Crystal growth
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      – SubjectFull: Ceramic-matrix composites
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      – TitleFull: Controlled growth of SiC whiskers through nucleation site engineering using AlCl3-Activated carbon felt.
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              M: 05
              Text: May2026:Part A
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              Y: 2026
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