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Reduction of self assemble wrinkle structure of defect-rich MoSe2 phase using sulfur treatment.

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Title: Reduction of self assemble wrinkle structure of defect-rich MoSe2 phase using sulfur treatment.
Authors: Sarkar, Prosenjit1 (AUTHOR) prosenjits553@gmail.com, Nisha2 (AUTHOR) nishujrf777@gmail.com
Source: Applied Physics A: Materials Science & Processing. May2026, Vol. 132 Issue 5, p1-13. 13p.
Subjects: Sulfuration, Wrinkle patterns, Molybdenum selenides, Optoelectronics, Applied sciences, Thin film deposition, Transition metal chalcogenides, Surface morphology
Abstract: Transition metal dichalcogenides (TMDCs) derived from molybdenum (Mo), such as MoS2 and MoSe2, has gained tremendous interest due to its highlighting electronic and optoelectronic properties. This work mainly focused on synthesis of MoSe2 at extremely low temperature (350 °C) by non-vacuum process. The effect of sulphur presence during the synthesis was examined, followed by the production of thin films utilising evaporation technique. The surface morphology of MoSe2 with sulfur presence has begun to expand beyond the boundary of the wrinkle edge compared to that of without sulfur. Raman, XRD and XPS revealed small traces of oxide phase along MoSe2 which reduced after sulfur addition during synthesis. The intensity of the Mo-Se-related band exhibits an increase, while the intensity of the Mo-O band demonstrates a proportional decrease. Photoluminescence peaks show low emission due to the presence of impurity phases as well as multilayers. A detailed study on the impact of Sulfur addition on Ag/MoSe2/p-Si heterojunction properties were also performed. C-V profile of the film indicated an increase in accumulation capacitance, indicating some defects due to oxide phase and interface were recovered by possess of synthesized sample in presence of S element. This research pointed to a novel approach for investigating the effect of sulfur during the synthesis of MoSe2 powder and thin film for optoelectronic application. Experiments show that it has the potential to reduce defect engineering in combination with sulfur which prevents the formation of comparatively high wrinkle height, thereby increasing its application in optoelectronics field. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
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Abstract:Transition metal dichalcogenides (TMDCs) derived from molybdenum (Mo), such as MoS2 and MoSe2, has gained tremendous interest due to its highlighting electronic and optoelectronic properties. This work mainly focused on synthesis of MoSe2 at extremely low temperature (350 °C) by non-vacuum process. The effect of sulphur presence during the synthesis was examined, followed by the production of thin films utilising evaporation technique. The surface morphology of MoSe2 with sulfur presence has begun to expand beyond the boundary of the wrinkle edge compared to that of without sulfur. Raman, XRD and XPS revealed small traces of oxide phase along MoSe2 which reduced after sulfur addition during synthesis. The intensity of the Mo-Se-related band exhibits an increase, while the intensity of the Mo-O band demonstrates a proportional decrease. Photoluminescence peaks show low emission due to the presence of impurity phases as well as multilayers. A detailed study on the impact of Sulfur addition on Ag/MoSe2/p-Si heterojunction properties were also performed. C-V profile of the film indicated an increase in accumulation capacitance, indicating some defects due to oxide phase and interface were recovered by possess of synthesized sample in presence of S element. This research pointed to a novel approach for investigating the effect of sulfur during the synthesis of MoSe2 powder and thin film for optoelectronic application. Experiments show that it has the potential to reduce defect engineering in combination with sulfur which prevents the formation of comparatively high wrinkle height, thereby increasing its application in optoelectronics field. [ABSTRACT FROM AUTHOR]
ISSN:09478396
DOI:10.1007/s00339-026-09633-9