Reduction of self assemble wrinkle structure of defect-rich MoSe2 phase using sulfur treatment.
Saved in:
| Title: | Reduction of self assemble wrinkle structure of defect-rich MoSe |
|---|---|
| Authors: | Sarkar, Prosenjit1 (AUTHOR) prosenjits553@gmail.com, Nisha2 (AUTHOR) nishujrf777@gmail.com |
| Source: | Applied Physics A: Materials Science & Processing. May2026, Vol. 132 Issue 5, p1-13. 13p. |
| Subjects: | Sulfuration, Wrinkle patterns, Molybdenum selenides, Optoelectronics, Applied sciences, Thin film deposition, Transition metal chalcogenides, Surface morphology |
| Abstract: | Transition metal dichalcogenides (TMDCs) derived from molybdenum (Mo), such as MoS2 and MoSe2, has gained tremendous interest due to its highlighting electronic and optoelectronic properties. This work mainly focused on synthesis of MoSe2 at extremely low temperature (350 °C) by non-vacuum process. The effect of sulphur presence during the synthesis was examined, followed by the production of thin films utilising evaporation technique. The surface morphology of MoSe2 with sulfur presence has begun to expand beyond the boundary of the wrinkle edge compared to that of without sulfur. Raman, XRD and XPS revealed small traces of oxide phase along MoSe2 which reduced after sulfur addition during synthesis. The intensity of the Mo-Se-related band exhibits an increase, while the intensity of the Mo-O band demonstrates a proportional decrease. Photoluminescence peaks show low emission due to the presence of impurity phases as well as multilayers. A detailed study on the impact of Sulfur addition on Ag/MoSe2/p-Si heterojunction properties were also performed. C-V profile of the film indicated an increase in accumulation capacitance, indicating some defects due to oxide phase and interface were recovered by possess of synthesized sample in presence of S element. This research pointed to a novel approach for investigating the effect of sulfur during the synthesis of MoSe2 powder and thin film for optoelectronic application. Experiments show that it has the potential to reduce defect engineering in combination with sulfur which prevents the formation of comparatively high wrinkle height, thereby increasing its application in optoelectronics field. [ABSTRACT FROM AUTHOR] |
| Copyright of Applied Physics A: Materials Science & Processing is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
|---|---|
| Header | DbId: egs DbLabel: Engineering Source An: 193808658 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
| IllustrationInfo | |
| Items | – Name: Title Label: Title Group: Ti Data: Reduction of self assemble wrinkle structure of defect-rich MoSe<subscript>2</subscript> phase using sulfur treatment. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Sarkar%2C+Prosenjit%22">Sarkar, Prosenjit</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> prosenjits553@gmail.com</i><br /><searchLink fieldCode="AR" term="%22Nisha%22">Nisha</searchLink><relatesTo>2</relatesTo> (AUTHOR)<i> nishujrf777@gmail.com</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Applied+Physics+A%3A+Materials+Science+%26+Processing%22">Applied Physics A: Materials Science & Processing</searchLink>. May2026, Vol. 132 Issue 5, p1-13. 13p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Sulfuration%22">Sulfuration</searchLink><br /><searchLink fieldCode="DE" term="%22Wrinkle+patterns%22">Wrinkle patterns</searchLink><br /><searchLink fieldCode="DE" term="%22Molybdenum+selenides%22">Molybdenum selenides</searchLink><br /><searchLink fieldCode="DE" term="%22Optoelectronics%22">Optoelectronics</searchLink><br /><searchLink fieldCode="DE" term="%22Applied+sciences%22">Applied sciences</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+film+deposition%22">Thin film deposition</searchLink><br /><searchLink fieldCode="DE" term="%22Transition+metal+chalcogenides%22">Transition metal chalcogenides</searchLink><br /><searchLink fieldCode="DE" term="%22Surface+morphology%22">Surface morphology</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Transition metal dichalcogenides (TMDCs) derived from molybdenum (Mo), such as MoS2 and MoSe2, has gained tremendous interest due to its highlighting electronic and optoelectronic properties. This work mainly focused on synthesis of MoSe2 at extremely low temperature (350 °C) by non-vacuum process. The effect of sulphur presence during the synthesis was examined, followed by the production of thin films utilising evaporation technique. The surface morphology of MoSe2 with sulfur presence has begun to expand beyond the boundary of the wrinkle edge compared to that of without sulfur. Raman, XRD and XPS revealed small traces of oxide phase along MoSe2 which reduced after sulfur addition during synthesis. The intensity of the Mo-Se-related band exhibits an increase, while the intensity of the Mo-O band demonstrates a proportional decrease. Photoluminescence peaks show low emission due to the presence of impurity phases as well as multilayers. A detailed study on the impact of Sulfur addition on Ag/MoSe2/p-Si heterojunction properties were also performed. C-V profile of the film indicated an increase in accumulation capacitance, indicating some defects due to oxide phase and interface were recovered by possess of synthesized sample in presence of S element. This research pointed to a novel approach for investigating the effect of sulfur during the synthesis of MoSe2 powder and thin film for optoelectronic application. Experiments show that it has the potential to reduce defect engineering in combination with sulfur which prevents the formation of comparatively high wrinkle height, thereby increasing its application in optoelectronics field. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Applied Physics A: Materials Science & Processing is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=193808658 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s00339-026-09633-9 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 13 StartPage: 1 Subjects: – SubjectFull: Sulfuration Type: general – SubjectFull: Wrinkle patterns Type: general – SubjectFull: Molybdenum selenides Type: general – SubjectFull: Optoelectronics Type: general – SubjectFull: Applied sciences Type: general – SubjectFull: Thin film deposition Type: general – SubjectFull: Transition metal chalcogenides Type: general – SubjectFull: Surface morphology Type: general Titles: – TitleFull: Reduction of self assemble wrinkle structure of defect-rich MoSe2 phase using sulfur treatment. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Sarkar, Prosenjit – PersonEntity: Name: NameFull: Nisha IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 05 Text: May2026 Type: published Y: 2026 Identifiers: – Type: issn-print Value: 09478396 Numbering: – Type: volume Value: 132 – Type: issue Value: 5 Titles: – TitleFull: Applied Physics A: Materials Science & Processing Type: main |
| ResultId | 1 |
