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Achieving ultralow resistance drift and enhanced thermal stability in Ti-doped GeSb9 alloys for phase-change memory.

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Title: Achieving ultralow resistance drift and enhanced thermal stability in Ti-doped GeSb9 alloys for phase-change memory.
Authors: Yang, Zilin1 (AUTHOR), Wang, Guoxiang1,2,3 (AUTHOR) wangguoxiang@nbu.edu.cn, Wu, Tong1 (AUTHOR), Chen, Yingqi1 (AUTHOR), Wang, Haohao1 (AUTHOR), Chen, Mengli1 (AUTHOR), He, Anyi1 (AUTHOR)
Source: Ceramics International. Jun2026:Part B, Vol. 52 Issue 14, p25034-25041. 8p.
Subjects: Thermal stability, Phase change memory, X-ray photoelectron spectroscopy, Crystallization, Magnetron sputtering, Phase change materials, Raman spectroscopy, Electric properties
Abstract: GeSb 9 and Ti-doped GeSb 9 phase-change thin films were fabricated by magnetron sputtering, and the relationship between resistance drift behavior and crystallization characteristics was systematically investigated. The results indicate that when the Ti doping concentration reaches 13.11 at. %, the Ti 13.11 (GeSb 9) 86.89 film exhibits excellent thermal stability, with a crystallization temperature of 235 °C and a ten-year data retention temperature of 156.8 °C. The resistance drift coefficient is markedly reduced from 0.00192 for pure GeSb 9 to 0.00011 for the Ti 13.11 (GeSb 9) 86.89 film. Raman spectroscopy analysis reveals that Ti doping effectively suppresses the growth of large grains in the GeSb 9 matrix. Furthermore, Ti doping reduced the crystallization kinetics exponent (n), thereby effectively regulating the nucleation and grain-growth processes and rendering the crystallization mechanism more controllable. XPS reveals the existence of strong Ti-Sb bonds in Ti-doped GeSb 9 films. Microstructural analysis reveals that the addition of Ti inhibits grain growth, while Ti-Sb bonds stabilize the amorphous regions, thus improving the amorphous phase stability. We conclude that the strong Ti-Sb bonds form the microscopic basis for the enhanced thermal stability and low resistance drift in Ti-doped GeSb 9 films, providing valuable insights for improving the performance of antimony-based phase-change materials. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
Description
Abstract:GeSb 9 and Ti-doped GeSb 9 phase-change thin films were fabricated by magnetron sputtering, and the relationship between resistance drift behavior and crystallization characteristics was systematically investigated. The results indicate that when the Ti doping concentration reaches 13.11 at. %, the Ti 13.11 (GeSb 9) 86.89 film exhibits excellent thermal stability, with a crystallization temperature of 235 °C and a ten-year data retention temperature of 156.8 °C. The resistance drift coefficient is markedly reduced from 0.00192 for pure GeSb 9 to 0.00011 for the Ti 13.11 (GeSb 9) 86.89 film. Raman spectroscopy analysis reveals that Ti doping effectively suppresses the growth of large grains in the GeSb 9 matrix. Furthermore, Ti doping reduced the crystallization kinetics exponent (n), thereby effectively regulating the nucleation and grain-growth processes and rendering the crystallization mechanism more controllable. XPS reveals the existence of strong Ti-Sb bonds in Ti-doped GeSb 9 films. Microstructural analysis reveals that the addition of Ti inhibits grain growth, while Ti-Sb bonds stabilize the amorphous regions, thus improving the amorphous phase stability. We conclude that the strong Ti-Sb bonds form the microscopic basis for the enhanced thermal stability and low resistance drift in Ti-doped GeSb 9 films, providing valuable insights for improving the performance of antimony-based phase-change materials. [ABSTRACT FROM AUTHOR]
ISSN:02728842
DOI:10.1016/j.ceramint.2026.04.163