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Strain greatly improves the visible light transparency and p-type electrical conductivity for GaAgS2.

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Title:	Strain greatly improves the visible light transparency and p-type electrical conductivity for GaAgS2.
Authors:	Deng, Yuhang¹ (AUTHOR), Chen, Wanting¹ (AUTHOR), Yang, Liu¹ (AUTHOR), Lu, Guangduo¹ (AUTHOR), Fan, Shuaiwei^1,2 (AUTHOR) phyfsw@ctgu.edu.cn
Source:	Ceramics International. Jun2026:Part C, Vol. 52 Issue 14, p26888-26894. 7p.
Subjects:	Transparency (Optics), Electric conductivity, Hole mobility, Optoelectronic devices, Band gaps, Transparent electronics, Strains & stresses (Mechanics)
Abstract:	Transparent conducting materials (TCMs) are vital in the optoelectronic field. To date, the n-type TCMs dominate the commercial applications while the superior p-type TCMs are rare. In this work, we find strain is an effective scheme to tune the electronic, optical, elastic, and p-type transport properties of GaAgS 2. Ab-plane compressive strains effectively widen the band gap due to enhanced hybridization between Ga-s and S-s orbitals, while the hole effective mass decreases notably owing to strengthened coupling between S-p and Ag-d orbitals. Specifically, under 5.0% ab-plane compression, the band gap increases to 2.98 eV, the visible light transmittance reaches 70.0% along the x(y)-direction at thickness of 70.0 nm, the maximum hole mobility is 44.7 cm2/V·s, and the p-type electrical conductivity increases by 20.0 % compared to zero strain case. Furthermore, compressive strains cause the transition energy level ε (0/-1) of the primary p-type defect (Ag vacancy, V Ag) to lower to 0.19 eV. Coupled with the excellent visible light transparency, ductility and the promoted p-type electrical conductivity make GaAgS 2 become a competitive p-type TCM, and apply in flexible optoelectronic devices. [ABSTRACT FROM AUTHOR]
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Database:	Engineering Source

Description
Abstract:	Transparent conducting materials (TCMs) are vital in the optoelectronic field. To date, the n-type TCMs dominate the commercial applications while the superior p-type TCMs are rare. In this work, we find strain is an effective scheme to tune the electronic, optical, elastic, and p-type transport properties of GaAgS 2. Ab-plane compressive strains effectively widen the band gap due to enhanced hybridization between Ga-s and S-s orbitals, while the hole effective mass decreases notably owing to strengthened coupling between S-p and Ag-d orbitals. Specifically, under 5.0% ab-plane compression, the band gap increases to 2.98 eV, the visible light transmittance reaches 70.0% along the x(y)-direction at thickness of 70.0 nm, the maximum hole mobility is 44.7 cm2/V·s, and the p-type electrical conductivity increases by 20.0 % compared to zero strain case. Furthermore, compressive strains cause the transition energy level ε (0/-1) of the primary p-type defect (Ag vacancy, V Ag) to lower to 0.19 eV. Coupled with the excellent visible light transparency, ductility and the promoted p-type electrical conductivity make GaAgS 2 become a competitive p-type TCM, and apply in flexible optoelectronic devices. [ABSTRACT FROM AUTHOR]
ISSN:	02728842
DOI:	10.1016/j.ceramint.2026.04.239