Strain greatly improves the visible light transparency and p-type electrical conductivity for GaAgS2.
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| Title: | Strain greatly improves the visible light transparency and p-type electrical conductivity for GaAgS2. |
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| Authors: | Deng, Yuhang1 (AUTHOR), Chen, Wanting1 (AUTHOR), Yang, Liu1 (AUTHOR), Lu, Guangduo1 (AUTHOR), Fan, Shuaiwei1,2 (AUTHOR) phyfsw@ctgu.edu.cn |
| Source: | Ceramics International. Jun2026:Part C, Vol. 52 Issue 14, p26888-26894. 7p. |
| Subjects: | Transparency (Optics), Electric conductivity, Hole mobility, Optoelectronic devices, Band gaps, Transparent electronics, Strains & stresses (Mechanics) |
| Abstract: | Transparent conducting materials (TCMs) are vital in the optoelectronic field. To date, the n-type TCMs dominate the commercial applications while the superior p-type TCMs are rare. In this work, we find strain is an effective scheme to tune the electronic, optical, elastic, and p-type transport properties of GaAgS 2. Ab-plane compressive strains effectively widen the band gap due to enhanced hybridization between Ga-s and S-s orbitals, while the hole effective mass decreases notably owing to strengthened coupling between S-p and Ag-d orbitals. Specifically, under 5.0% ab-plane compression, the band gap increases to 2.98 eV, the visible light transmittance reaches 70.0% along the x(y)-direction at thickness of 70.0 nm, the maximum hole mobility is 44.7 cm2/V·s, and the p-type electrical conductivity increases by 20.0 % compared to zero strain case. Furthermore, compressive strains cause the transition energy level ε (0/-1) of the primary p-type defect (Ag vacancy, V Ag) to lower to 0.19 eV. Coupled with the excellent visible light transparency, ductility and the promoted p-type electrical conductivity make GaAgS 2 become a competitive p-type TCM, and apply in flexible optoelectronic devices. [ABSTRACT FROM AUTHOR] |
| Copyright of Ceramics International is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Header | DbId: egs DbLabel: Engineering Source An: 193886623 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Strain greatly improves the visible light transparency and p-type electrical conductivity for GaAgS2. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Deng%2C+Yuhang%22">Deng, Yuhang</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chen%2C+Wanting%22">Chen, Wanting</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Yang%2C+Liu%22">Yang, Liu</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Lu%2C+Guangduo%22">Lu, Guangduo</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Fan%2C+Shuaiwei%22">Fan, Shuaiwei</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> phyfsw@ctgu.edu.cn</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Ceramics+International%22">Ceramics International</searchLink>. Jun2026:Part C, Vol. 52 Issue 14, p26888-26894. 7p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Transparency+%28Optics%29%22">Transparency (Optics)</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+conductivity%22">Electric conductivity</searchLink><br /><searchLink fieldCode="DE" term="%22Hole+mobility%22">Hole mobility</searchLink><br /><searchLink fieldCode="DE" term="%22Optoelectronic+devices%22">Optoelectronic devices</searchLink><br /><searchLink fieldCode="DE" term="%22Band+gaps%22">Band gaps</searchLink><br /><searchLink fieldCode="DE" term="%22Transparent+electronics%22">Transparent electronics</searchLink><br /><searchLink fieldCode="DE" term="%22Strains+%26+stresses+%28Mechanics%29%22">Strains & stresses (Mechanics)</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Transparent conducting materials (TCMs) are vital in the optoelectronic field. To date, the n-type TCMs dominate the commercial applications while the superior p-type TCMs are rare. In this work, we find strain is an effective scheme to tune the electronic, optical, elastic, and p-type transport properties of GaAgS 2. Ab-plane compressive strains effectively widen the band gap due to enhanced hybridization between Ga-s and S-s orbitals, while the hole effective mass decreases notably owing to strengthened coupling between S-p and Ag-d orbitals. Specifically, under 5.0% ab-plane compression, the band gap increases to 2.98 eV, the visible light transmittance reaches 70.0% along the x(y)-direction at thickness of 70.0 nm, the maximum hole mobility is 44.7 cm2/V·s, and the p-type electrical conductivity increases by 20.0 % compared to zero strain case. Furthermore, compressive strains cause the transition energy level ε (0/-1) of the primary p-type defect (Ag vacancy, V Ag) to lower to 0.19 eV. Coupled with the excellent visible light transparency, ductility and the promoted p-type electrical conductivity make GaAgS 2 become a competitive p-type TCM, and apply in flexible optoelectronic devices. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Ceramics International is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1016/j.ceramint.2026.04.239 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 7 StartPage: 26888 Subjects: – SubjectFull: Transparency (Optics) Type: general – SubjectFull: Electric conductivity Type: general – SubjectFull: Hole mobility Type: general – SubjectFull: Optoelectronic devices Type: general – SubjectFull: Band gaps Type: general – SubjectFull: Transparent electronics Type: general – SubjectFull: Strains & stresses (Mechanics) Type: general Titles: – TitleFull: Strain greatly improves the visible light transparency and p-type electrical conductivity for GaAgS2. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Deng, Yuhang – PersonEntity: Name: NameFull: Chen, Wanting – PersonEntity: Name: NameFull: Yang, Liu – PersonEntity: Name: NameFull: Lu, Guangduo – PersonEntity: Name: NameFull: Fan, Shuaiwei IsPartOfRelationships: – BibEntity: Dates: – D: 10 M: 06 Text: Jun2026:Part C Type: published Y: 2026 Identifiers: – Type: issn-print Value: 02728842 Numbering: – Type: volume Value: 52 – Type: issue Value: 14 Titles: – TitleFull: Ceramics International Type: main |
| ResultId | 1 |
