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Optimization of deposition parameters for silicon dioxide thin films synthesized by reactive pulsed-direct current magnetron sputtering.

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Title: Optimization of deposition parameters for silicon dioxide thin films synthesized by reactive pulsed-direct current magnetron sputtering.
Authors: Cruz-Gabarain, L1,2 (AUTHOR) cruzglc@ens.cnyn.unam.mx, Abundiz-Cisneros, N3 (AUTHOR), Sanginés, R3 (AUTHOR), Águila Muñoz, J3,4 (AUTHOR)
Source: Journal of Physics D: Applied Physics. 2026, Vol. 59 Issue 20, p1-14. 14p.
Subjects: Magnetron sputtering, Reactive sputtering, Current-voltage characteristics, Silica films, Refractive index, Emission spectroscopy, Optical spectroscopy
Abstract: Silicon dioxide (SiO₂) thin films were deposited by pulsed DC reactive magnetron sputtering under conditions in which discharge power and pulse frequency were systematically varied. Optical emission spectroscopy, voltage–current waveform analysis, and spectroscopic ellipsometry were combined to correlate the experimental parameters with the refractive index, extinction coefficient, and deposition rate of the films. The study shows that SiO₂ films with desirable optical characteristics can be obtained when the deposition is carried out at the optimal point identified in the characterization curves, where the transition into the poisoned regime is properly established. The integrated methodology provides a framework for optimizing pulsed-DC reactive sputtering processes and can be extended to the controlled synthesis of other compound films. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
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Abstract:Silicon dioxide (SiO₂) thin films were deposited by pulsed DC reactive magnetron sputtering under conditions in which discharge power and pulse frequency were systematically varied. Optical emission spectroscopy, voltage–current waveform analysis, and spectroscopic ellipsometry were combined to correlate the experimental parameters with the refractive index, extinction coefficient, and deposition rate of the films. The study shows that SiO₂ films with desirable optical characteristics can be obtained when the deposition is carried out at the optimal point identified in the characterization curves, where the transition into the poisoned regime is properly established. The integrated methodology provides a framework for optimizing pulsed-DC reactive sputtering processes and can be extended to the controlled synthesis of other compound films. [ABSTRACT FROM AUTHOR]
ISSN:00223727
DOI:10.1088/1361-6463/ae686b