Bibliographic Details
| Title: |
Ion-Stimulated Surface Diffusion. |
| Authors: |
Fadeev, A. V.1 (AUTHOR) AlexVFadeev@gmail.com, Devyatko, Yu. N.1 (AUTHOR) |
| Source: |
Russian Microelectronics. Feb2026, Vol. 55 Issue 1, p66-73. 8p. |
| Subjects: |
Surface diffusion, Ion beams, Irradiation, Temperature effect, Semiconductor materials, Microelectronics, Noble gases |
| Abstract: |
Irradiation of surfaces with low-energy ions is an integral part of a number of technological operations in microelectronics. This paper proposes a model that can explain the change in the surface diffusion coefficient of Ge, adsorbed on Si(111), with increasing temperature under the influence of a low-energy ion flow of noble gases. [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |
