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Low-breakdown, high-α SrTiO3 varistors via grain-boundary engineering with ZnBi2O4.

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Title: Low-breakdown, high-α SrTiO3 varistors via grain-boundary engineering with ZnBi2O4.
Authors: Hsiang, Hsing-I.1 (AUTHOR) hsingi@mail.ncku.edu.tw, Lin, Che-Cheng1 (AUTHOR)
Source: Journal of Materials Science: Materials in Electronics. May2026, Vol. 37 Issue 15, p1-15. 15p.
Abstract: SrTiO3 varistors are promising alternatives to ZnO for low-voltage applications when their grain-boundary barrier response is properly controlled. Here, ZnBi2O4 (ZB) addition and post-sintering reoxidation were employed to modify the electrical behavior of La-doped SrTiO3 ceramics. The optimized composition exhibited a low breakdown voltage, high nonlinearity coefficient, and reduced leakage current. Linearized C–V analysis indicated an increase in the effective grain-boundary barrier height after ZB addition and reoxidation, while impedance and AC conductivity results showed reduced grain-boundary carrier transport. Fracture-surface XPS revealed a reduced Ti3+ fraction and a modest increase in adsorbate-related oxygen species after reoxidation. Although direct grain-boundary-resolved chemical evidence was not obtained, the combined results consistently indicate that ZB addition and reoxidation strengthen the functional grain-boundary barrier network. This study demonstrates a practical grain-boundary engineering strategy for low-voltage SrTiO3-based varistors. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
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Abstract:SrTiO3 varistors are promising alternatives to ZnO for low-voltage applications when their grain-boundary barrier response is properly controlled. Here, ZnBi2O4 (ZB) addition and post-sintering reoxidation were employed to modify the electrical behavior of La-doped SrTiO3 ceramics. The optimized composition exhibited a low breakdown voltage, high nonlinearity coefficient, and reduced leakage current. Linearized C–V analysis indicated an increase in the effective grain-boundary barrier height after ZB addition and reoxidation, while impedance and AC conductivity results showed reduced grain-boundary carrier transport. Fracture-surface XPS revealed a reduced Ti3+ fraction and a modest increase in adsorbate-related oxygen species after reoxidation. Although direct grain-boundary-resolved chemical evidence was not obtained, the combined results consistently indicate that ZB addition and reoxidation strengthen the functional grain-boundary barrier network. This study demonstrates a practical grain-boundary engineering strategy for low-voltage SrTiO3-based varistors. [ABSTRACT FROM AUTHOR]
ISSN:09574522
DOI:10.1007/s10854-026-17592-3