View in EDS

GaN lateral pn junctions by MBE in situ selective area sublimation and regrowth.

Saved in:
Bibliographic Details
Title: GaN lateral pn junctions by MBE in situ selective area sublimation and regrowth.
Authors: Murarka, Hardik1 (AUTHOR), Arora, Jayeesh1 (AUTHOR) ja828@cornell.edu, Ramesh, Madhav2 (AUTHOR), Nguyen, Thai-Son1 (AUTHOR), Bhattacharya, Debaditya2 (AUTHOR), Smith, Kathleen3 (AUTHOR), Savant, Chandrashekhar1 (AUTHOR), Encomendero, Jimy2 (AUTHOR), Protasenko, Vladimir2 (AUTHOR), Xing, Huili Grace1,2,4 (AUTHOR), Jena, Debdeep1,2,4 (AUTHOR) djena@cornell.edu
Source: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films. May2026, Vol. 44 Issue 3, p1-7. 7p.
Subjects: Molecular beam epitaxy, Semiconductor junctions, Vacuum technology, Gallium nitride, Electroluminescence
Abstract: We present a technique of patterned in situ molecular beam epitaxy (MBE) selective area sublimation etching of p-type GaN and direct MBE regrowth of n-type GaN to form lateral pn junction structures without air exposure of the junction region. The Mg-doped p-GaN has 2.1 × 10 18 / cm 3 mobile holes of mobility 4 cm 2 /V s and the Si-doped n-GaN has 3 × 10 18 / cm 3 mobile electrons of mobility >100 cm 2 /V s, both at room temperature. The resulting lateral pn junction exhibits rectification and GaN band-edge electroluminescence at 3.4 eV at forward bias, in addition to blue electroluminescence associated with Mg-doped GaN. We systematically describe the entire MBE etch and regrowth process and expect this vacuum-based technique to enable lateral structures of higher complexity than shown in this initial demonstration. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
Description
Abstract:We present a technique of patterned in situ molecular beam epitaxy (MBE) selective area sublimation etching of p-type GaN and direct MBE regrowth of n-type GaN to form lateral pn junction structures without air exposure of the junction region. The Mg-doped p-GaN has 2.1 × 10 18 / cm 3 mobile holes of mobility 4 cm 2 /V s and the Si-doped n-GaN has 3 × 10 18 / cm 3 mobile electrons of mobility >100 cm 2 /V s, both at room temperature. The resulting lateral pn junction exhibits rectification and GaN band-edge electroluminescence at 3.4 eV at forward bias, in addition to blue electroluminescence associated with Mg-doped GaN. We systematically describe the entire MBE etch and regrowth process and expect this vacuum-based technique to enable lateral structures of higher complexity than shown in this initial demonstration. [ABSTRACT FROM AUTHOR]
ISSN:07342101
DOI:10.1116/6.0005402