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Defects and Conduction Band Electron Distribution in n-GaSb Single Crystal with Low Carbon Content.

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Title: Defects and Conduction Band Electron Distribution in n-GaSb Single Crystal with Low Carbon Content.
Authors: Yang, Wenwen1,2 (AUTHOR), Zhao, Youwen1 (AUTHOR), Li, Chenhui1 (AUTHOR), Bai, Yihan1,2 (AUTHOR), Lv, Xinyu1,2 (AUTHOR), Fan, Jiangtao1,2 (AUTHOR), Wang, Guowei3 (AUTHOR), Pan, Jiaoqing3 (AUTHOR), Shen, Guiying1,2 (AUTHOR) shenguiying@semi.ac.cn
Source: Journal of Electronic Materials. Jul2026, Vol. 55 Issue 7, p6158-6166. 9p.
Subjects: Conduction bands, Electron distribution, Carbon, Photoluminescence, Gallium antimonide, Doping agents (Chemistry)
Abstract: This study systematically investigates the influence of carbon content on the electrical and optical properties of Te-doped n-type GaSb single crystals grown by the liquid encapsulated Czochralski (LEC) method. Room-temperature Hall measurements reveal anomalous behavior in which high-purity samples exhibit lower mobility than their lower-purity counterparts. Supported by theoretical calculations based on the two-band model, we attribute this behavior to the reduced acceptor compensation in high-purity crystals. The relatively higher Fermi level in the low-compensation sample enhances the statistical occupation of the heavy-mass secondary L-valley, thereby degrading the overall mobility. Consequently, Hall data obtained at 77 K are found to more accurately reflect the intrinsic electrical properties. Optically, photoluminescence (PL) measurements indicate that carbon impurities occupy Sb sites (CSb), creating a competitive relationship that suppresses intrinsic defect complexes such as (VGaGaSb)2−. However, this suppression comes at the cost of enhanced non-radiative recombination and strong electrical compensation. These findings suggest that optimizing n-GaSb requires strictly minimizing carbon contamination while independently controlling intrinsic defects. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
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Abstract:This study systematically investigates the influence of carbon content on the electrical and optical properties of Te-doped n-type GaSb single crystals grown by the liquid encapsulated Czochralski (LEC) method. Room-temperature Hall measurements reveal anomalous behavior in which high-purity samples exhibit lower mobility than their lower-purity counterparts. Supported by theoretical calculations based on the two-band model, we attribute this behavior to the reduced acceptor compensation in high-purity crystals. The relatively higher Fermi level in the low-compensation sample enhances the statistical occupation of the heavy-mass secondary L-valley, thereby degrading the overall mobility. Consequently, Hall data obtained at 77 K are found to more accurately reflect the intrinsic electrical properties. Optically, photoluminescence (PL) measurements indicate that carbon impurities occupy Sb sites (CSb), creating a competitive relationship that suppresses intrinsic defect complexes such as (VGaGaSb)2−. However, this suppression comes at the cost of enhanced non-radiative recombination and strong electrical compensation. These findings suggest that optimizing n-GaSb requires strictly minimizing carbon contamination while independently controlling intrinsic defects. [ABSTRACT FROM AUTHOR]
ISSN:03615235
DOI:10.1007/s11664-026-12885-z