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High-Electron-Mobility and Ultrawide-Bandgap β-(AlxInyGa1−x−y)2O3 Lattice-Matched to β-Ga2O3.

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Title: High-Electron-Mobility and Ultrawide-Bandgap β-(AlxInyGa1−x−y)2O3 Lattice-Matched to β-Ga2O3.
Authors: Zha, Xian-Hu1 (AUTHOR), Li, Shuang2 (AUTHOR), Chen, Jiaxiang1 (AUTHOR), Yang, Maojin1 (AUTHOR), Jiao, Teng1 (AUTHOR), Liu, Yan1 (AUTHOR), Fan, Weijun3 (AUTHOR), Wan, Yu-Xi1 (AUTHOR), Zhang, Dao Hua1 (AUTHOR) zhangdaohua@phlab.com.cn
Source: Journal of Electronic Materials. Jul2026, Vol. 55 Issue 7, p6167-6177. 11p.
Subjects: Electron mobility, Wide gap semiconductors, Metal oxide semiconductors, Power electronics, Ab-initio calculations
Abstract: Maintaining a wide bandgap while enhancing electron mobility is crucial for advancing the performance of β-Ga2O3-based power devices. Herein, the structural and electronic properties of quaternary β-(AlxInyGa1−x−y)2O3 (0 ≤ x ≤ 0.09375; 0 ≤ y ≤ 0.09375; x−y ≤ −0.03125) are studied via first-principles calculations. Given its predicted minimal lattice mismatch of less than 1.09% with β-Ga2O3, β-(AlxInyGa1−x−y)2O3 can be epitaxially grown on β-Ga2O3 substrates. The bandgaps of β-(AlxInyGa1−x−y)2O3 are calculated and fitted to the function of gap = 1.82x − 1.80y − 8.32x⋅y + 4.81, with all values determined to exceed 4.68 eV. Notably, β-(AlxInyGa1−x−y)2O3 exhibits high and anisotropic electron mobility. At an electron concentration of 1016 cm−3, the average electron mobility of β-(Al0.0625In0.09375Ga0.84375)2O3 reaches 501 cm2V−1 s−1, which is 3.98 times that of β-Ga2O3. Specifically, the electron mobility along the b-axis of β-(AlxInyGa1−x−y)2O3 is consistently higher, and room-temperature mobility of 1153 cm2V−1 s−1 is achieved for a β-(Al0.0625In0.09375Ga0.84375)2O3 configuration. The high electron mobility is attributed to the delocalized nature of the In 5s orbital, which makes a greater contribution to the conduction band minimum of β-(AlxInyGa1−x−y)2O3. The anisotropy of electron mobility in β-(AlxInyGa1−x−y)2O3 strongly depends on the distribution of In atoms, and the higher mobility values along the b-axis are due to the more compact atomic arrangement in this direction. Our results suggest that β-(AlxInyGa1−x−y)2O3 holds significant potential for high-power device applications. [ABSTRACT FROM AUTHOR]
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Abstract:Maintaining a wide bandgap while enhancing electron mobility is crucial for advancing the performance of β-Ga2O3-based power devices. Herein, the structural and electronic properties of quaternary β-(AlxInyGa1−x−y)2O3 (0 ≤ x ≤ 0.09375; 0 ≤ y ≤ 0.09375; x−y ≤ −0.03125) are studied via first-principles calculations. Given its predicted minimal lattice mismatch of less than 1.09% with β-Ga2O3, β-(AlxInyGa1−x−y)2O3 can be epitaxially grown on β-Ga2O3 substrates. The bandgaps of β-(AlxInyGa1−x−y)2O3 are calculated and fitted to the function of gap = 1.82x − 1.80y − 8.32x⋅y + 4.81, with all values determined to exceed 4.68 eV. Notably, β-(AlxInyGa1−x−y)2O3 exhibits high and anisotropic electron mobility. At an electron concentration of 1016 cm−3, the average electron mobility of β-(Al0.0625In0.09375Ga0.84375)2O3 reaches 501 cm2V−1 s−1, which is 3.98 times that of β-Ga2O3. Specifically, the electron mobility along the b-axis of β-(AlxInyGa1−x−y)2O3 is consistently higher, and room-temperature mobility of 1153 cm2V−1 s−1 is achieved for a β-(Al0.0625In0.09375Ga0.84375)2O3 configuration. The high electron mobility is attributed to the delocalized nature of the In 5s orbital, which makes a greater contribution to the conduction band minimum of β-(AlxInyGa1−x−y)2O3. The anisotropy of electron mobility in β-(AlxInyGa1−x−y)2O3 strongly depends on the distribution of In atoms, and the higher mobility values along the b-axis are due to the more compact atomic arrangement in this direction. Our results suggest that β-(AlxInyGa1−x−y)2O3 holds significant potential for high-power device applications. [ABSTRACT FROM AUTHOR]
ISSN:03615235
DOI:10.1007/s11664-026-12904-z