View in EDS

High-Electron-Mobility and Ultrawide-Bandgap β-(AlxInyGa1−x−y)2O3 Lattice-Matched to β-Ga2O3.

Saved in:
Bibliographic Details
Title: High-Electron-Mobility and Ultrawide-Bandgap β-(AlxInyGa1−x−y)2O3 Lattice-Matched to β-Ga2O3.
Authors: Zha, Xian-Hu1 (AUTHOR), Li, Shuang2 (AUTHOR), Chen, Jiaxiang1 (AUTHOR), Yang, Maojin1 (AUTHOR), Jiao, Teng1 (AUTHOR), Liu, Yan1 (AUTHOR), Fan, Weijun3 (AUTHOR), Wan, Yu-Xi1 (AUTHOR), Zhang, Dao Hua1 (AUTHOR) zhangdaohua@phlab.com.cn
Source: Journal of Electronic Materials. Jul2026, Vol. 55 Issue 7, p6167-6177. 11p.
Subjects: Electron mobility, Wide gap semiconductors, Metal oxide semiconductors, Power electronics, Ab-initio calculations
Abstract: Maintaining a wide bandgap while enhancing electron mobility is crucial for advancing the performance of β-Ga2O3-based power devices. Herein, the structural and electronic properties of quaternary β-(AlxInyGa1−x−y)2O3 (0 ≤ x ≤ 0.09375; 0 ≤ y ≤ 0.09375; x−y ≤ −0.03125) are studied via first-principles calculations. Given its predicted minimal lattice mismatch of less than 1.09% with β-Ga2O3, β-(AlxInyGa1−x−y)2O3 can be epitaxially grown on β-Ga2O3 substrates. The bandgaps of β-(AlxInyGa1−x−y)2O3 are calculated and fitted to the function of gap = 1.82x − 1.80y − 8.32x⋅y + 4.81, with all values determined to exceed 4.68 eV. Notably, β-(AlxInyGa1−x−y)2O3 exhibits high and anisotropic electron mobility. At an electron concentration of 1016 cm−3, the average electron mobility of β-(Al0.0625In0.09375Ga0.84375)2O3 reaches 501 cm2V−1 s−1, which is 3.98 times that of β-Ga2O3. Specifically, the electron mobility along the b-axis of β-(AlxInyGa1−x−y)2O3 is consistently higher, and room-temperature mobility of 1153 cm2V−1 s−1 is achieved for a β-(Al0.0625In0.09375Ga0.84375)2O3 configuration. The high electron mobility is attributed to the delocalized nature of the In 5s orbital, which makes a greater contribution to the conduction band minimum of β-(AlxInyGa1−x−y)2O3. The anisotropy of electron mobility in β-(AlxInyGa1−x−y)2O3 strongly depends on the distribution of In atoms, and the higher mobility values along the b-axis are due to the more compact atomic arrangement in this direction. Our results suggest that β-(AlxInyGa1−x−y)2O3 holds significant potential for high-power device applications. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
FullText Text:
  Availability: 0
Header DbId: egs
DbLabel: Engineering Source
An: 194546596
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: High-Electron-Mobility and Ultrawide-Bandgap β-(Al<subscript>x</subscript>In<subscript>y</subscript>Ga<subscript>1−x−y</subscript>)<subscript>2</subscript>O<subscript>3</subscript> Lattice-Matched to β-Ga<subscript>2</subscript>O<subscript>3</subscript>.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Zha%2C+Xian-Hu%22">Zha, Xian-Hu</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Li%2C+Shuang%22">Li, Shuang</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chen%2C+Jiaxiang%22">Chen, Jiaxiang</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Yang%2C+Maojin%22">Yang, Maojin</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Jiao%2C+Teng%22">Jiao, Teng</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Liu%2C+Yan%22">Liu, Yan</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Fan%2C+Weijun%22">Fan, Weijun</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Wan%2C+Yu-Xi%22">Wan, Yu-Xi</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhang%2C+Dao+Hua%22">Zhang, Dao Hua</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> zhangdaohua@phlab.com.cn</i>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>. Jul2026, Vol. 55 Issue 7, p6167-6177. 11p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Electron+mobility%22">Electron mobility</searchLink><br /><searchLink fieldCode="DE" term="%22Wide+gap+semiconductors%22">Wide gap semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Metal+oxide+semiconductors%22">Metal oxide semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Power+electronics%22">Power electronics</searchLink><br /><searchLink fieldCode="DE" term="%22Ab-initio+calculations%22">Ab-initio calculations</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Maintaining a wide bandgap while enhancing electron mobility is crucial for advancing the performance of β-Ga2O3-based power devices. Herein, the structural and electronic properties of quaternary β-(AlxInyGa1−x−y)2O3 (0 ≤ x ≤ 0.09375; 0 ≤ y ≤ 0.09375; x−y ≤ −0.03125) are studied via first-principles calculations. Given its predicted minimal lattice mismatch of less than 1.09% with β-Ga2O3, β-(AlxInyGa1−x−y)2O3 can be epitaxially grown on β-Ga2O3 substrates. The bandgaps of β-(AlxInyGa1−x−y)2O3 are calculated and fitted to the function of gap = 1.82x − 1.80y − 8.32x⋅y + 4.81, with all values determined to exceed 4.68 eV. Notably, β-(AlxInyGa1−x−y)2O3 exhibits high and anisotropic electron mobility. At an electron concentration of 1016 cm−3, the average electron mobility of β-(Al0.0625In0.09375Ga0.84375)2O3 reaches 501 cm2V−1 s−1, which is 3.98 times that of β-Ga2O3. Specifically, the electron mobility along the b-axis of β-(AlxInyGa1−x−y)2O3 is consistently higher, and room-temperature mobility of 1153 cm2V−1 s−1 is achieved for a β-(Al0.0625In0.09375Ga0.84375)2O3 configuration. The high electron mobility is attributed to the delocalized nature of the In 5s orbital, which makes a greater contribution to the conduction band minimum of β-(AlxInyGa1−x−y)2O3. The anisotropy of electron mobility in β-(AlxInyGa1−x−y)2O3 strongly depends on the distribution of In atoms, and the higher mobility values along the b-axis are due to the more compact atomic arrangement in this direction. Our results suggest that β-(AlxInyGa1−x−y)2O3 holds significant potential for high-power device applications. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=194546596
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1007/s11664-026-12904-z
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 11
        StartPage: 6167
    Subjects:
      – SubjectFull: Electron mobility
        Type: general
      – SubjectFull: Wide gap semiconductors
        Type: general
      – SubjectFull: Metal oxide semiconductors
        Type: general
      – SubjectFull: Power electronics
        Type: general
      – SubjectFull: Ab-initio calculations
        Type: general
    Titles:
      – TitleFull: High-Electron-Mobility and Ultrawide-Bandgap β-(AlxInyGa1−x−y)2O3 Lattice-Matched to β-Ga2O3.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Zha, Xian-Hu
      – PersonEntity:
          Name:
            NameFull: Li, Shuang
      – PersonEntity:
          Name:
            NameFull: Chen, Jiaxiang
      – PersonEntity:
          Name:
            NameFull: Yang, Maojin
      – PersonEntity:
          Name:
            NameFull: Jiao, Teng
      – PersonEntity:
          Name:
            NameFull: Liu, Yan
      – PersonEntity:
          Name:
            NameFull: Fan, Weijun
      – PersonEntity:
          Name:
            NameFull: Wan, Yu-Xi
      – PersonEntity:
          Name:
            NameFull: Zhang, Dao Hua
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 07
              Text: Jul2026
              Type: published
              Y: 2026
          Identifiers:
            – Type: issn-print
              Value: 03615235
          Numbering:
            – Type: volume
              Value: 55
            – Type: issue
              Value: 7
          Titles:
            – TitleFull: Journal of Electronic Materials
              Type: main
ResultId 1