Structural Properties and Energy Band Alignment of Crystalline AlN Grown by Atomic Layer Deposition on Epitaxial Graphene.
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| Title: | Structural Properties and Energy Band Alignment of Crystalline AlN Grown by Atomic Layer Deposition on Epitaxial Graphene. |
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| Authors: | Schilirò, Emanuela1 (AUTHOR) emanuela.schiliro@imm.cnr.it, Panasci, Salvatore Ethan1,2 (AUTHOR), Lo Nigro, Raffaella1,3 (AUTHOR), Roccaforte, Fabrizio1,4 (AUTHOR), Blagoev, Blagoy2,5 (AUTHOR), Mehandzhiev, Vladimir1,2 (AUTHOR), Georgieva, Borislava2,3 (AUTHOR), Avramova, Ivalina3,4 (AUTHOR), Yakimova, Rositsa4,5 (AUTHOR), Beshkova, Milena3,5 (AUTHOR), Giannazzo, Filippo1 (AUTHOR) |
| Source: | Nanomaterials (2079-4991). Jun2026, Vol. 16 Issue 11, p659. 12p. |
| Subjects: | Aluminum nitride, Graphene, Electronic band structure, Crystal structure, Kelvin probe force microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy, Atomic layer deposition |
| Abstract: | In this work, the atomic layer deposition (ALD) of an ultra-thin AlN film on the surface of monolayer EG grown on-axis 4H-SiC(0001) substrates has been investigated as a function of the number of ALD cycles. The formation of a homogeneous film with a 10 nm thickness and crystalline wurtzite structure was obtained after 320 cycles, as demonstrated by atomic force microscopy (AFM) mapping, X-ray photoelectron spectroscopy (XPS) and X-ray diffraction. Raman mapping revealed a significant reduction in the native compressive strain of as-grown EG (ε ≈ −0.36%) with increasing ALD cycles, down to a value of −0.16% after full coverage. Finally, Kelvin Probe Force Microscopy (KPFM) surface potential mapping allowed the evaluation of energy band alignment of the AlN/EG heterojunction, with a conduction band offset of ~2.6 eV between the crystalline AlN film and the underlying EG. Such a large offset confirms AlN as a promising gate dielectric for EG-based devices. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | In this work, the atomic layer deposition (ALD) of an ultra-thin AlN film on the surface of monolayer EG grown on-axis 4H-SiC(0001) substrates has been investigated as a function of the number of ALD cycles. The formation of a homogeneous film with a 10 nm thickness and crystalline wurtzite structure was obtained after 320 cycles, as demonstrated by atomic force microscopy (AFM) mapping, X-ray photoelectron spectroscopy (XPS) and X-ray diffraction. Raman mapping revealed a significant reduction in the native compressive strain of as-grown EG (ε ≈ −0.36%) with increasing ALD cycles, down to a value of −0.16% after full coverage. Finally, Kelvin Probe Force Microscopy (KPFM) surface potential mapping allowed the evaluation of energy band alignment of the AlN/EG heterojunction, with a conduction band offset of ~2.6 eV between the crystalline AlN film and the underlying EG. Such a large offset confirms AlN as a promising gate dielectric for EG-based devices. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 20794991 |
| DOI: | 10.3390/nano16110659 |
