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Material removal of 4H-SiC under different temperatures by a tribological test against PCD ball and molecular dynamics simulations.

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Bibliographic Details
Title: Material removal of 4H-SiC under different temperatures by a tribological test against PCD ball and molecular dynamics simulations.
Authors: Zeng, Jun-yong1 (AUTHOR), Zhang, Feng-lin1 (AUTHOR) zhangfl@gdut.edu.cn, Song, Rui-xue1 (AUTHOR), Yang, Wei-jian1 (AUTHOR), Yang, Wei1,2 (AUTHOR) yw@zzsm.com, Pan, Xiao-yi3 (AUTHOR)
Source: Ceramics International. Jul2026, Vol. 52 Issue 18, p33755-33768. 14p.
Subjects: Temperature effect, Silicon carbide, Machining, Mechanical wear testing, Mechanical wear, Abrasive machining, Friction velocity, Molecular dynamics
Abstract: In abrasive machining of 4H-SiC, the temperature at the machining interface between abrasive and workpiece can vary significantly due to the accumulated friction, coolant cooling, and the difficulty in measurement. The material removal of 4H-SiC may also varies significantly at different temperatures. In present study, a tribological test of 4H-SiC sliding against polycrystalline diamond (PCD) balls under different temperatures was carried out. The dependence of the coefficient of friction (COF), wear characteristics as well as the surface morphology of 4H-SiC and PCD balls under different temperature conditions (−78 °C, 25 °C, 200 °C, and 400 °C) were examined. Additionally, molecular dynamics simulations were conducted to understand the temperature effect on material removal characteristics and subsurface damage of 4H-SiC. The results indicate that elevated temperatures increase the friction coefficient (0.35 at 400 °C) and material removal rate (2.43 × 10−5 mm3/N·m at 400 °C) of 4H-SiC, intensify the adhesion of wear debris to the PCD balls, and degrade the surface quality. However, both cutting force and specific cutting energy significantly decrease as temperature increases, while the material removal rate increases, indicating improved material removal efficiency despite the deterioration of surface quality. As temperature increases, von Mises stress gradually decreases, while hydrostatic stress and temperature increment increase significantly. Amorphous phase transformation and dislocation slip dominate the deformation mechanism of 4H-SiC during nanoscratching. Increasing temperature promotes deeper amorphous transformation layers and longer dislocation lengths, thereby intensifying subsurface damage. The investigation demonstrates that increasing cutting temperature can effectively reduce cutting resistance and enhance material removal efficiency, while simultaneously degrading both surface and subsurface integrity. [Display omitted] [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
Description
Abstract:In abrasive machining of 4H-SiC, the temperature at the machining interface between abrasive and workpiece can vary significantly due to the accumulated friction, coolant cooling, and the difficulty in measurement. The material removal of 4H-SiC may also varies significantly at different temperatures. In present study, a tribological test of 4H-SiC sliding against polycrystalline diamond (PCD) balls under different temperatures was carried out. The dependence of the coefficient of friction (COF), wear characteristics as well as the surface morphology of 4H-SiC and PCD balls under different temperature conditions (−78 °C, 25 °C, 200 °C, and 400 °C) were examined. Additionally, molecular dynamics simulations were conducted to understand the temperature effect on material removal characteristics and subsurface damage of 4H-SiC. The results indicate that elevated temperatures increase the friction coefficient (0.35 at 400 °C) and material removal rate (2.43 × 10−5 mm3/N·m at 400 °C) of 4H-SiC, intensify the adhesion of wear debris to the PCD balls, and degrade the surface quality. However, both cutting force and specific cutting energy significantly decrease as temperature increases, while the material removal rate increases, indicating improved material removal efficiency despite the deterioration of surface quality. As temperature increases, von Mises stress gradually decreases, while hydrostatic stress and temperature increment increase significantly. Amorphous phase transformation and dislocation slip dominate the deformation mechanism of 4H-SiC during nanoscratching. Increasing temperature promotes deeper amorphous transformation layers and longer dislocation lengths, thereby intensifying subsurface damage. The investigation demonstrates that increasing cutting temperature can effectively reduce cutting resistance and enhance material removal efficiency, while simultaneously degrading both surface and subsurface integrity. [Display omitted] [ABSTRACT FROM AUTHOR]
ISSN:02728842
DOI:10.1016/j.ceramint.2026.05.402