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Material removal of 4H-SiC under different temperatures by a tribological test against PCD ball and molecular dynamics simulations.

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Title: Material removal of 4H-SiC under different temperatures by a tribological test against PCD ball and molecular dynamics simulations.
Authors: Zeng, Jun-yong1 (AUTHOR), Zhang, Feng-lin1 (AUTHOR) zhangfl@gdut.edu.cn, Song, Rui-xue1 (AUTHOR), Yang, Wei-jian1 (AUTHOR), Yang, Wei1,2 (AUTHOR) yw@zzsm.com, Pan, Xiao-yi3 (AUTHOR)
Source: Ceramics International. Jul2026, Vol. 52 Issue 18, p33755-33768. 14p.
Subjects: Temperature effect, Silicon carbide, Machining, Mechanical wear testing, Mechanical wear, Abrasive machining, Friction velocity, Molecular dynamics
Abstract: In abrasive machining of 4H-SiC, the temperature at the machining interface between abrasive and workpiece can vary significantly due to the accumulated friction, coolant cooling, and the difficulty in measurement. The material removal of 4H-SiC may also varies significantly at different temperatures. In present study, a tribological test of 4H-SiC sliding against polycrystalline diamond (PCD) balls under different temperatures was carried out. The dependence of the coefficient of friction (COF), wear characteristics as well as the surface morphology of 4H-SiC and PCD balls under different temperature conditions (−78 °C, 25 °C, 200 °C, and 400 °C) were examined. Additionally, molecular dynamics simulations were conducted to understand the temperature effect on material removal characteristics and subsurface damage of 4H-SiC. The results indicate that elevated temperatures increase the friction coefficient (0.35 at 400 °C) and material removal rate (2.43 × 10−5 mm3/N·m at 400 °C) of 4H-SiC, intensify the adhesion of wear debris to the PCD balls, and degrade the surface quality. However, both cutting force and specific cutting energy significantly decrease as temperature increases, while the material removal rate increases, indicating improved material removal efficiency despite the deterioration of surface quality. As temperature increases, von Mises stress gradually decreases, while hydrostatic stress and temperature increment increase significantly. Amorphous phase transformation and dislocation slip dominate the deformation mechanism of 4H-SiC during nanoscratching. Increasing temperature promotes deeper amorphous transformation layers and longer dislocation lengths, thereby intensifying subsurface damage. The investigation demonstrates that increasing cutting temperature can effectively reduce cutting resistance and enhance material removal efficiency, while simultaneously degrading both surface and subsurface integrity. [Display omitted] [ABSTRACT FROM AUTHOR]
Copyright of Ceramics International is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 194968231
AccessLevel: 6
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  Data: Material removal of 4H-SiC under different temperatures by a tribological test against PCD ball and molecular dynamics simulations.
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  Data: <searchLink fieldCode="AR" term="%22Zeng%2C+Jun-yong%22">Zeng, Jun-yong</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhang%2C+Feng-lin%22">Zhang, Feng-lin</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> zhangfl@gdut.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Song%2C+Rui-xue%22">Song, Rui-xue</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Yang%2C+Wei-jian%22">Yang, Wei-jian</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Yang%2C+Wei%22">Yang, Wei</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> yw@zzsm.com</i><br /><searchLink fieldCode="AR" term="%22Pan%2C+Xiao-yi%22">Pan, Xiao-yi</searchLink><relatesTo>3</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Ceramics+International%22">Ceramics International</searchLink>. Jul2026, Vol. 52 Issue 18, p33755-33768. 14p.
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  Data: <searchLink fieldCode="DE" term="%22Temperature+effect%22">Temperature effect</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon+carbide%22">Silicon carbide</searchLink><br /><searchLink fieldCode="DE" term="%22Machining%22">Machining</searchLink><br /><searchLink fieldCode="DE" term="%22Mechanical+wear+testing%22">Mechanical wear testing</searchLink><br /><searchLink fieldCode="DE" term="%22Mechanical+wear%22">Mechanical wear</searchLink><br /><searchLink fieldCode="DE" term="%22Abrasive+machining%22">Abrasive machining</searchLink><br /><searchLink fieldCode="DE" term="%22Friction+velocity%22">Friction velocity</searchLink><br /><searchLink fieldCode="DE" term="%22Molecular+dynamics%22">Molecular dynamics</searchLink>
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  Data: In abrasive machining of 4H-SiC, the temperature at the machining interface between abrasive and workpiece can vary significantly due to the accumulated friction, coolant cooling, and the difficulty in measurement. The material removal of 4H-SiC may also varies significantly at different temperatures. In present study, a tribological test of 4H-SiC sliding against polycrystalline diamond (PCD) balls under different temperatures was carried out. The dependence of the coefficient of friction (COF), wear characteristics as well as the surface morphology of 4H-SiC and PCD balls under different temperature conditions (−78 °C, 25 °C, 200 °C, and 400 °C) were examined. Additionally, molecular dynamics simulations were conducted to understand the temperature effect on material removal characteristics and subsurface damage of 4H-SiC. The results indicate that elevated temperatures increase the friction coefficient (0.35 at 400 °C) and material removal rate (2.43 × 10−5 mm3/N·m at 400 °C) of 4H-SiC, intensify the adhesion of wear debris to the PCD balls, and degrade the surface quality. However, both cutting force and specific cutting energy significantly decrease as temperature increases, while the material removal rate increases, indicating improved material removal efficiency despite the deterioration of surface quality. As temperature increases, von Mises stress gradually decreases, while hydrostatic stress and temperature increment increase significantly. Amorphous phase transformation and dislocation slip dominate the deformation mechanism of 4H-SiC during nanoscratching. Increasing temperature promotes deeper amorphous transformation layers and longer dislocation lengths, thereby intensifying subsurface damage. The investigation demonstrates that increasing cutting temperature can effectively reduce cutting resistance and enhance material removal efficiency, while simultaneously degrading both surface and subsurface integrity. [Display omitted] [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Ceramics International is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
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      – Type: doi
        Value: 10.1016/j.ceramint.2026.05.402
    Languages:
      – Code: eng
        Text: English
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      Pagination:
        PageCount: 14
        StartPage: 33755
    Subjects:
      – SubjectFull: Temperature effect
        Type: general
      – SubjectFull: Silicon carbide
        Type: general
      – SubjectFull: Machining
        Type: general
      – SubjectFull: Mechanical wear testing
        Type: general
      – SubjectFull: Mechanical wear
        Type: general
      – SubjectFull: Abrasive machining
        Type: general
      – SubjectFull: Friction velocity
        Type: general
      – SubjectFull: Molecular dynamics
        Type: general
    Titles:
      – TitleFull: Material removal of 4H-SiC under different temperatures by a tribological test against PCD ball and molecular dynamics simulations.
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            NameFull: Zeng, Jun-yong
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            NameFull: Zhang, Feng-lin
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            NameFull: Song, Rui-xue
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            NameFull: Yang, Wei-jian
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            NameFull: Yang, Wei
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            – D: 06
              M: 07
              Text: Jul2026
              Type: published
              Y: 2026
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