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Noninvasive method for monitoring plasma parameters and dielectric thickness applicable to plasma processing.

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Title: Noninvasive method for monitoring plasma parameters and dielectric thickness applicable to plasma processing.
Authors: Seo, Beom-Jun1 (AUTHOR), Jung, Jiwon1 (AUTHOR), Choi, Jae-Hoon1 (AUTHOR), Ahn, Se-Hun1 (AUTHOR), Kim, Nayeon1 (AUTHOR), Chung, Chin-Wook1 (AUTHOR) joykang@hanyang.ac.kr
Source: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films. Jul2026, Vol. 44 Issue 4, p1-13. 13p.
Subjects: Plasma etching, Plasma materials processing, Dielectric strength, Plasma chemistry, Real-time computing
Abstract: Maintaining process uniformity is critical in high-aspect-ratio etching, where local plasma and surface conditions strongly influence etch performance. Among the hardware components affecting uniformity, the focus ring, a dielectric structure surrounding the wafer, plays a key role in shaping the edge plasma and maintaining uniform ion flux. However, its gradual erosion during operation causes nonuniform etch profiles, particle generation, and yield degradation, making real-time wear monitoring essential for stable, high-yield semiconductor processing. Here, we present an electrical sensing method for real-time, in situ monitoring of thick dielectric components under plasma operation. The plasma–dielectric system is modeled as an equivalent circuit, and dielectric thickness is extracted from capacitance using a dual-frequency method that decouples plasma effects. Fringing effects are incorporated into the ideal parallel-plate capacitor model using a Padé approximant, and the model is further refined by weighted least-squares fitting. The proposed method enables accurate thickness measurement despite plasma variations and provides a practical, noninvasive approach for monitoring both plasma parameters and focus ring wear during plasma processing. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
Description
Abstract:Maintaining process uniformity is critical in high-aspect-ratio etching, where local plasma and surface conditions strongly influence etch performance. Among the hardware components affecting uniformity, the focus ring, a dielectric structure surrounding the wafer, plays a key role in shaping the edge plasma and maintaining uniform ion flux. However, its gradual erosion during operation causes nonuniform etch profiles, particle generation, and yield degradation, making real-time wear monitoring essential for stable, high-yield semiconductor processing. Here, we present an electrical sensing method for real-time, in situ monitoring of thick dielectric components under plasma operation. The plasma–dielectric system is modeled as an equivalent circuit, and dielectric thickness is extracted from capacitance using a dual-frequency method that decouples plasma effects. Fringing effects are incorporated into the ideal parallel-plate capacitor model using a Padé approximant, and the model is further refined by weighted least-squares fitting. The proposed method enables accurate thickness measurement despite plasma variations and provides a practical, noninvasive approach for monitoring both plasma parameters and focus ring wear during plasma processing. [ABSTRACT FROM AUTHOR]
ISSN:07342101
DOI:10.1116/6.0005528