Noninvasive method for monitoring plasma parameters and dielectric thickness applicable to plasma processing.
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| Title: | Noninvasive method for monitoring plasma parameters and dielectric thickness applicable to plasma processing. |
|---|---|
| Authors: | Seo, Beom-Jun1 (AUTHOR), Jung, Jiwon1 (AUTHOR), Choi, Jae-Hoon1 (AUTHOR), Ahn, Se-Hun1 (AUTHOR), Kim, Nayeon1 (AUTHOR), Chung, Chin-Wook1 (AUTHOR) joykang@hanyang.ac.kr |
| Source: | Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films. Jul2026, Vol. 44 Issue 4, p1-13. 13p. |
| Subjects: | Plasma etching, Plasma materials processing, Dielectric strength, Plasma chemistry, Real-time computing |
| Abstract: | Maintaining process uniformity is critical in high-aspect-ratio etching, where local plasma and surface conditions strongly influence etch performance. Among the hardware components affecting uniformity, the focus ring, a dielectric structure surrounding the wafer, plays a key role in shaping the edge plasma and maintaining uniform ion flux. However, its gradual erosion during operation causes nonuniform etch profiles, particle generation, and yield degradation, making real-time wear monitoring essential for stable, high-yield semiconductor processing. Here, we present an electrical sensing method for real-time, in situ monitoring of thick dielectric components under plasma operation. The plasma–dielectric system is modeled as an equivalent circuit, and dielectric thickness is extracted from capacitance using a dual-frequency method that decouples plasma effects. Fringing effects are incorporated into the ideal parallel-plate capacitor model using a Padé approximant, and the model is further refined by weighted least-squares fitting. The proposed method enables accurate thickness measurement despite plasma variations and provides a practical, noninvasive approach for monitoring both plasma parameters and focus ring wear during plasma processing. [ABSTRACT FROM AUTHOR] |
| Copyright of Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 195070434 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Noninvasive method for monitoring plasma parameters and dielectric thickness applicable to plasma processing. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Seo%2C+Beom-Jun%22">Seo, Beom-Jun</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Jung%2C+Jiwon%22">Jung, Jiwon</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Choi%2C+Jae-Hoon%22">Choi, Jae-Hoon</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Ahn%2C+Se-Hun%22">Ahn, Se-Hun</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kim%2C+Nayeon%22">Kim, Nayeon</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chung%2C+Chin-Wook%22">Chung, Chin-Wook</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> joykang@hanyang.ac.kr</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Vacuum+Science+%26+Technology%3A+Part+A-Vacuums%2C+Surfaces+%26+Films%22">Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films</searchLink>. Jul2026, Vol. 44 Issue 4, p1-13. 13p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Plasma+etching%22">Plasma etching</searchLink><br /><searchLink fieldCode="DE" term="%22Plasma+materials+processing%22">Plasma materials processing</searchLink><br /><searchLink fieldCode="DE" term="%22Dielectric+strength%22">Dielectric strength</searchLink><br /><searchLink fieldCode="DE" term="%22Plasma+chemistry%22">Plasma chemistry</searchLink><br /><searchLink fieldCode="DE" term="%22Real-time+computing%22">Real-time computing</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Maintaining process uniformity is critical in high-aspect-ratio etching, where local plasma and surface conditions strongly influence etch performance. Among the hardware components affecting uniformity, the focus ring, a dielectric structure surrounding the wafer, plays a key role in shaping the edge plasma and maintaining uniform ion flux. However, its gradual erosion during operation causes nonuniform etch profiles, particle generation, and yield degradation, making real-time wear monitoring essential for stable, high-yield semiconductor processing. Here, we present an electrical sensing method for real-time, in situ monitoring of thick dielectric components under plasma operation. The plasma–dielectric system is modeled as an equivalent circuit, and dielectric thickness is extracted from capacitance using a dual-frequency method that decouples plasma effects. Fringing effects are incorporated into the ideal parallel-plate capacitor model using a Padé approximant, and the model is further refined by weighted least-squares fitting. The proposed method enables accurate thickness measurement despite plasma variations and provides a practical, noninvasive approach for monitoring both plasma parameters and focus ring wear during plasma processing. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1116/6.0005528 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 13 StartPage: 1 Subjects: – SubjectFull: Plasma etching Type: general – SubjectFull: Plasma materials processing Type: general – SubjectFull: Dielectric strength Type: general – SubjectFull: Plasma chemistry Type: general – SubjectFull: Real-time computing Type: general Titles: – TitleFull: Noninvasive method for monitoring plasma parameters and dielectric thickness applicable to plasma processing. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Seo, Beom-Jun – PersonEntity: Name: NameFull: Jung, Jiwon – PersonEntity: Name: NameFull: Choi, Jae-Hoon – PersonEntity: Name: NameFull: Ahn, Se-Hun – PersonEntity: Name: NameFull: Kim, Nayeon – PersonEntity: Name: NameFull: Chung, Chin-Wook IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 07 Text: Jul2026 Type: published Y: 2026 Identifiers: – Type: issn-print Value: 07342101 Numbering: – Type: volume Value: 44 – Type: issue Value: 4 Titles: – TitleFull: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films Type: main |
| ResultId | 1 |
