Bibliographic Details
| Title: |
In situ reduction and nitrification method for the synthesis of Ga and GaN quantum dotsin the channels of mesoporous silicon materials. |
| Authors: |
Liang LL Li, Jian-lin JS Shi |
| Source: |
Nanotechnology. Jan2006, Vol. 17 Issue 1, p344-348. 5p. |
| Subjects: |
Quantum electronics, Quantum dots, Silica, Nanoparticles |
| Abstract: |
A novel and facile method for the synthesis of Ga and GaN quantum dots in the channelsof mesoporous silicon materials, designated as an in situ and low-temperature nitrificationmethod, is described. In this method, the Si–H functional groups were directly introducedinto the channels of SBA-15 mesoporous materials resulting in highly dispersed Gananoparticles on the pore walls of the matrix, which can be nitrified easily under relativelylower temperature. [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |
