APA (7th ed.) Citation

Wu, Y., Singh, M., & Singh, J. (2006). Device Scaling Physics and Channel Velocities in AIGaN/GaN HFETs: Velocities and Effective Gate Length. IEEE Transactions on Electron Devices, 53(4), 588. https://doi.org/10.1109/TED.2006.870571

Chicago Style (17th ed.) Citation

Wu, Yuh-Renn, Madhusudan Singh, and Jasprit Singh. "Device Scaling Physics and Channel Velocities in AIGaN/GaN HFETs: Velocities and Effective Gate Length." IEEE Transactions on Electron Devices 53, no. 4 (2006): 588. https://doi.org/10.1109/TED.2006.870571.

MLA (9th ed.) Citation

Wu, Yuh-Renn, et al. "Device Scaling Physics and Channel Velocities in AIGaN/GaN HFETs: Velocities and Effective Gate Length." IEEE Transactions on Electron Devices, vol. 53, no. 4, 2006, p. 588, https://doi.org/10.1109/TED.2006.870571.