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Device Scaling Physics and Channel Velocities in AIGaN/GaN HFETs: Velocities and Effective Gate Length.

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Title: Device Scaling Physics and Channel Velocities in AIGaN/GaN HFETs: Velocities and Effective Gate Length.
Authors: Yuh-Renn Wu1, Singh, Madhusudan2, Singh, Jasprit1
Source: IEEE Transactions on Electron Devices. Apr2006, Vol. 53 Issue 4, p588-593. 6p. 1 Diagram, 7 Graphs.
Subjects: Field-effect transistors, Monte Carlo method, Scattering (Physics), Polarization (Nuclear physics), Photon emission, Electric fields
Abstract: This paper addresses scaling issues in AIGaN/GaN heterojunction field-effect transistor's (HFETs) using ensemble Monte Carlo techniques. For gate lengths below 0.25 μm, ƒT values are known not to scale linearly with the inverse gate length. The authors' simulations show this to be due to an increasing difference between the lithographic gate length and the effective gate length as the devices shrink. The results for AIGaN/GaN are compared with In0.52Al0.48-In0.53Ga0.47As-InP devices, and the authors found that the limiting role of velocity overshoot and depletion region spread causes the GaN HFETs to have a peak ƒT of ∼ 220 GHz compared to ∼ 500 GHz for InGaAs devices. [ABSTRACT FROM AUTHOR]
Copyright of IEEE Transactions on Electron Devices is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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Header DbId: egs
DbLabel: Engineering Source
An: 20926505
AccessLevel: 6
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PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Device Scaling Physics and Channel Velocities in AIGaN/GaN HFETs: Velocities and Effective Gate Length.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Yuh-Renn+Wu%22">Yuh-Renn Wu</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Singh%2C+Madhusudan%22">Singh, Madhusudan</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Singh%2C+Jasprit%22">Singh, Jasprit</searchLink><relatesTo>1</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22IEEE+Transactions+on+Electron+Devices%22">IEEE Transactions on Electron Devices</searchLink>. Apr2006, Vol. 53 Issue 4, p588-593. 6p. 1 Diagram, 7 Graphs.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Field-effect+transistors%22">Field-effect transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Monte+Carlo+method%22">Monte Carlo method</searchLink><br /><searchLink fieldCode="DE" term="%22Scattering+%28Physics%29%22">Scattering (Physics)</searchLink><br /><searchLink fieldCode="DE" term="%22Polarization+%28Nuclear+physics%29%22">Polarization (Nuclear physics)</searchLink><br /><searchLink fieldCode="DE" term="%22Photon+emission%22">Photon emission</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+fields%22">Electric fields</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: This paper addresses scaling issues in AIGaN/GaN heterojunction field-effect transistor's (HFETs) using ensemble Monte Carlo techniques. For gate lengths below 0.25 μm, ƒT values are known not to scale linearly with the inverse gate length. The authors' simulations show this to be due to an increasing difference between the lithographic gate length and the effective gate length as the devices shrink. The results for AIGaN/GaN are compared with In0.52Al0.48-In0.53Ga0.47As-InP devices, and the authors found that the limiting role of velocity overshoot and depletion region spread causes the GaN HFETs to have a peak ƒT of ∼ 220 GHz compared to ∼ 500 GHz for InGaAs devices. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of IEEE Transactions on Electron Devices is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1109/TED.2006.870571
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 6
        StartPage: 588
    Subjects:
      – SubjectFull: Field-effect transistors
        Type: general
      – SubjectFull: Monte Carlo method
        Type: general
      – SubjectFull: Scattering (Physics)
        Type: general
      – SubjectFull: Polarization (Nuclear physics)
        Type: general
      – SubjectFull: Photon emission
        Type: general
      – SubjectFull: Electric fields
        Type: general
    Titles:
      – TitleFull: Device Scaling Physics and Channel Velocities in AIGaN/GaN HFETs: Velocities and Effective Gate Length.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Yuh-Renn Wu
      – PersonEntity:
          Name:
            NameFull: Singh, Madhusudan
      – PersonEntity:
          Name:
            NameFull: Singh, Jasprit
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 04
              Text: Apr2006
              Type: published
              Y: 2006
          Identifiers:
            – Type: issn-print
              Value: 00189383
          Numbering:
            – Type: volume
              Value: 53
            – Type: issue
              Value: 4
          Titles:
            – TitleFull: IEEE Transactions on Electron Devices
              Type: main
ResultId 1