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Enhanced Crystallization and Improved Reliability for Low-Temperature-Processed Poly-Si TFTs With NH3-Plasma Pretreatment Before Crystallization.

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Title: Enhanced Crystallization and Improved Reliability for Low-Temperature-Processed Poly-Si TFTs With NH3-Plasma Pretreatment Before Crystallization.
Authors: Ching-Lin Fan1 clfan@et.ntust.edu.tw, Hui-Lung Lai1, Tsung-Hsien Yang1
Source: IEEE Electron Device Letters. Jul2006, Vol. 27 Issue 7, p576-578. 3p. 1 Chart, 2 Graphs.
Subjects: Crystallization, Thin-film circuits, Transistors, Silicon, Nitrogen, Hydrogen plasmas
Abstract: NHz-plasma pretreatment before crystallization was performed for the first time on low-temperature-processed poly-Si thin-film transistors (TFTs). TFTs after pretreatment can significantly reduce the thermal crystallization time of amorphous silicon from 24 to 4 h. The pretreatment can also improve device performance and hot-carrier resistivity. It was attributed to the defect-state passivation of nitrogen that is piled-up near the poly-Si film surface, which helps to terminate the dangling bonds in poly-Si thin film in place of weaker SiH and/or SiSi bonds. This new scheme provides a simple and effective method to decrease α-Si film crystallization time and simultaneously improve device performance and reliability. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
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Abstract:NHz-plasma pretreatment before crystallization was performed for the first time on low-temperature-processed poly-Si thin-film transistors (TFTs). TFTs after pretreatment can significantly reduce the thermal crystallization time of amorphous silicon from 24 to 4 h. The pretreatment can also improve device performance and hot-carrier resistivity. It was attributed to the defect-state passivation of nitrogen that is piled-up near the poly-Si film surface, which helps to terminate the dangling bonds in poly-Si thin film in place of weaker SiH and/or SiSi bonds. This new scheme provides a simple and effective method to decrease α-Si film crystallization time and simultaneously improve device performance and reliability. [ABSTRACT FROM AUTHOR]
ISSN:07413106
DOI:10.1109/LED.2006.877296