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Enhanced Crystallization and Improved Reliability for Low-Temperature-Processed Poly-Si TFTs With NH3-Plasma Pretreatment Before Crystallization.

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Title: Enhanced Crystallization and Improved Reliability for Low-Temperature-Processed Poly-Si TFTs With NH3-Plasma Pretreatment Before Crystallization.
Authors: Ching-Lin Fan1 clfan@et.ntust.edu.tw, Hui-Lung Lai1, Tsung-Hsien Yang1
Source: IEEE Electron Device Letters. Jul2006, Vol. 27 Issue 7, p576-578. 3p. 1 Chart, 2 Graphs.
Subjects: Crystallization, Thin-film circuits, Transistors, Silicon, Nitrogen, Hydrogen plasmas
Abstract: NHz-plasma pretreatment before crystallization was performed for the first time on low-temperature-processed poly-Si thin-film transistors (TFTs). TFTs after pretreatment can significantly reduce the thermal crystallization time of amorphous silicon from 24 to 4 h. The pretreatment can also improve device performance and hot-carrier resistivity. It was attributed to the defect-state passivation of nitrogen that is piled-up near the poly-Si film surface, which helps to terminate the dangling bonds in poly-Si thin film in place of weaker SiH and/or SiSi bonds. This new scheme provides a simple and effective method to decrease α-Si film crystallization time and simultaneously improve device performance and reliability. [ABSTRACT FROM AUTHOR]
Copyright of IEEE Electron Device Letters is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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DbLabel: Engineering Source
An: 21496831
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  Data: Enhanced Crystallization and Improved Reliability for Low-Temperature-Processed Poly-Si TFTs With NH<subscript>3</subscript>-Plasma Pretreatment Before Crystallization.
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  Data: <searchLink fieldCode="AR" term="%22Ching-Lin+Fan%22">Ching-Lin Fan</searchLink><relatesTo>1</relatesTo><i> clfan@et.ntust.edu.tw</i><br /><searchLink fieldCode="AR" term="%22Hui-Lung+Lai%22">Hui-Lung Lai</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Tsung-Hsien+Yang%22">Tsung-Hsien Yang</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22IEEE+Electron+Device+Letters%22">IEEE Electron Device Letters</searchLink>. Jul2006, Vol. 27 Issue 7, p576-578. 3p. 1 Chart, 2 Graphs.
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  Data: <searchLink fieldCode="DE" term="%22Crystallization%22">Crystallization</searchLink><br /><searchLink fieldCode="DE" term="%22Thin-film+circuits%22">Thin-film circuits</searchLink><br /><searchLink fieldCode="DE" term="%22Transistors%22">Transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon%22">Silicon</searchLink><br /><searchLink fieldCode="DE" term="%22Nitrogen%22">Nitrogen</searchLink><br /><searchLink fieldCode="DE" term="%22Hydrogen+plasmas%22">Hydrogen plasmas</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: NHz-plasma pretreatment before crystallization was performed for the first time on low-temperature-processed poly-Si thin-film transistors (TFTs). TFTs after pretreatment can significantly reduce the thermal crystallization time of amorphous silicon from 24 to 4 h. The pretreatment can also improve device performance and hot-carrier resistivity. It was attributed to the defect-state passivation of nitrogen that is piled-up near the poly-Si film surface, which helps to terminate the dangling bonds in poly-Si thin film in place of weaker SiH and/or SiSi bonds. This new scheme provides a simple and effective method to decrease α-Si film crystallization time and simultaneously improve device performance and reliability. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of IEEE Electron Device Letters is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1109/LED.2006.877296
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      – Code: eng
        Text: English
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        PageCount: 3
        StartPage: 576
    Subjects:
      – SubjectFull: Crystallization
        Type: general
      – SubjectFull: Thin-film circuits
        Type: general
      – SubjectFull: Transistors
        Type: general
      – SubjectFull: Silicon
        Type: general
      – SubjectFull: Nitrogen
        Type: general
      – SubjectFull: Hydrogen plasmas
        Type: general
    Titles:
      – TitleFull: Enhanced Crystallization and Improved Reliability for Low-Temperature-Processed Poly-Si TFTs With NH3-Plasma Pretreatment Before Crystallization.
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            NameFull: Ching-Lin Fan
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            NameFull: Hui-Lung Lai
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            NameFull: Tsung-Hsien Yang
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          Dates:
            – D: 01
              M: 07
              Text: Jul2006
              Type: published
              Y: 2006
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              Value: 27
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              Value: 7
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            – TitleFull: IEEE Electron Device Letters
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