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Use of SiO2 nanoparticles as etch mask to generate Si nanorods by reactive ion etch.

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Title: Use of SiO2 nanoparticles as etch mask to generate Si nanorods by reactive ion etch.
Authors: Eih-Zhe Liang1, Chao-Jei Huang1, Ching-Fuh Lin1,2,3 cflin@cc.ee.ntu.edu.tw
Source: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures. Mar/Apr2006, Vol. 24 Issue 2, p599-603. 5p. 3 Black and White Photographs, 1 Diagram, 2 Graphs.
Subjects: Silicon oxide, Nanoparticles, Silicon, Anisotropy, Engraving
Abstract: Silicon nanorods 20 nm in diameter are fabricated by reactive ion etch (RIE) to study anisotropy and damage profile in decananometer scale. RIE of gas mixture of SF6/O2 and SF6/CHF3 is tuned to achieve high anisotropy. The gas specie of SF6/O2 can reach 90% anisotropy, 84° taper angle, and 10:1 selectivity when SiO2 is used as the etching mask. The gas species of SF6/CHF3 can reach 95% anisotropy, 87° taper angle, and 10:1 selectivity with Cr as the mask. The fabrication technique of nanorods uses a monolayer of silicon dioxide nanoparticle as the etching mask. The nanorods uniformly cover up the entire 2 in. wafers with high density of 2×1011 cm-2. Surface damageafter the etching process of nanostructures is monitored using the microwave-reflectance photoconductance decay with KOH removal-and-probe technique. Highly damaged silicon is found within a depth of 30 nm and the lightly damaged part extends more than 100 nm. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
Description
Abstract:Silicon nanorods 20 nm in diameter are fabricated by reactive ion etch (RIE) to study anisotropy and damage profile in decananometer scale. RIE of gas mixture of SF6/O2 and SF6/CHF3 is tuned to achieve high anisotropy. The gas specie of SF6/O2 can reach 90% anisotropy, 84° taper angle, and 10:1 selectivity when SiO2 is used as the etching mask. The gas species of SF6/CHF3 can reach 95% anisotropy, 87° taper angle, and 10:1 selectivity with Cr as the mask. The fabrication technique of nanorods uses a monolayer of silicon dioxide nanoparticle as the etching mask. The nanorods uniformly cover up the entire 2 in. wafers with high density of 2×1011 cm-2. Surface damageafter the etching process of nanostructures is monitored using the microwave-reflectance photoconductance decay with KOH removal-and-probe technique. Highly damaged silicon is found within a depth of 30 nm and the lightly damaged part extends more than 100 nm. [ABSTRACT FROM AUTHOR]
ISSN:10711023
DOI:10.1116/1.2172251