View in EDS

Use of SiO2 nanoparticles as etch mask to generate Si nanorods by reactive ion etch.

Saved in:
Bibliographic Details
Title: Use of SiO2 nanoparticles as etch mask to generate Si nanorods by reactive ion etch.
Authors: Eih-Zhe Liang1, Chao-Jei Huang1, Ching-Fuh Lin1,2,3 cflin@cc.ee.ntu.edu.tw
Source: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures. Mar/Apr2006, Vol. 24 Issue 2, p599-603. 5p. 3 Black and White Photographs, 1 Diagram, 2 Graphs.
Subjects: Silicon oxide, Nanoparticles, Silicon, Anisotropy, Engraving
Abstract: Silicon nanorods 20 nm in diameter are fabricated by reactive ion etch (RIE) to study anisotropy and damage profile in decananometer scale. RIE of gas mixture of SF6/O2 and SF6/CHF3 is tuned to achieve high anisotropy. The gas specie of SF6/O2 can reach 90% anisotropy, 84° taper angle, and 10:1 selectivity when SiO2 is used as the etching mask. The gas species of SF6/CHF3 can reach 95% anisotropy, 87° taper angle, and 10:1 selectivity with Cr as the mask. The fabrication technique of nanorods uses a monolayer of silicon dioxide nanoparticle as the etching mask. The nanorods uniformly cover up the entire 2 in. wafers with high density of 2×1011 cm-2. Surface damageafter the etching process of nanostructures is monitored using the microwave-reflectance photoconductance decay with KOH removal-and-probe technique. Highly damaged silicon is found within a depth of 30 nm and the lightly damaged part extends more than 100 nm. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
FullText Text:
  Availability: 0
Header DbId: egs
DbLabel: Engineering Source
An: 23078783
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Use of SiO<subscript>2</subscript> nanoparticles as etch mask to generate Si nanorods by reactive ion etch.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Eih-Zhe+Liang%22">Eih-Zhe Liang</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Chao-Jei+Huang%22">Chao-Jei Huang</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Ching-Fuh+Lin%22">Ching-Fuh Lin</searchLink><relatesTo>1,2,3</relatesTo><i> cflin@cc.ee.ntu.edu.tw</i>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Journal+of+Vacuum+Science+%26+Technology%3A+Part+B-Microelectronics+%26+Nanometer+Structures%22">Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures</searchLink>. Mar/Apr2006, Vol. 24 Issue 2, p599-603. 5p. 3 Black and White Photographs, 1 Diagram, 2 Graphs.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Silicon+oxide%22">Silicon oxide</searchLink><br /><searchLink fieldCode="DE" term="%22Nanoparticles%22">Nanoparticles</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon%22">Silicon</searchLink><br /><searchLink fieldCode="DE" term="%22Anisotropy%22">Anisotropy</searchLink><br /><searchLink fieldCode="DE" term="%22Engraving%22">Engraving</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Silicon nanorods 20 nm in diameter are fabricated by reactive ion etch (RIE) to study anisotropy and damage profile in decananometer scale. RIE of gas mixture of SF6/O2 and SF6/CHF3 is tuned to achieve high anisotropy. The gas specie of SF6/O2 can reach 90% anisotropy, 84° taper angle, and 10:1 selectivity when SiO2 is used as the etching mask. The gas species of SF6/CHF3 can reach 95% anisotropy, 87° taper angle, and 10:1 selectivity with Cr as the mask. The fabrication technique of nanorods uses a monolayer of silicon dioxide nanoparticle as the etching mask. The nanorods uniformly cover up the entire 2 in. wafers with high density of 2×1011 cm-2. Surface damageafter the etching process of nanostructures is monitored using the microwave-reflectance photoconductance decay with KOH removal-and-probe technique. Highly damaged silicon is found within a depth of 30 nm and the lightly damaged part extends more than 100 nm. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=23078783
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1116/1.2172251
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 5
        StartPage: 599
    Subjects:
      – SubjectFull: Silicon oxide
        Type: general
      – SubjectFull: Nanoparticles
        Type: general
      – SubjectFull: Silicon
        Type: general
      – SubjectFull: Anisotropy
        Type: general
      – SubjectFull: Engraving
        Type: general
    Titles:
      – TitleFull: Use of SiO2 nanoparticles as etch mask to generate Si nanorods by reactive ion etch.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Eih-Zhe Liang
      – PersonEntity:
          Name:
            NameFull: Chao-Jei Huang
      – PersonEntity:
          Name:
            NameFull: Ching-Fuh Lin
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 03
              Text: Mar/Apr2006
              Type: published
              Y: 2006
          Identifiers:
            – Type: issn-print
              Value: 10711023
          Numbering:
            – Type: volume
              Value: 24
            – Type: issue
              Value: 2
          Titles:
            – TitleFull: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures
              Type: main
ResultId 1