Bibliographic Details
| Title: |
Evidence for a dose dependence for thermal redistribution of implanted silicon in SiO2 |
| Authors: |
Mathiot, Daniel1 Daniel.Mathiot@iness.c-strasbourg.fr, Perego, Michele2, Fanciulli, Marco2, Assayag, Gérard Ben3 |
| Source: |
Nuclear Instruments & Methods in Physics Research Section B. Jan2007, Vol. 254 Issue 1, p139-142. 4p. |
| Subjects: |
Properties of matter, Semiconductor doping, Solution (Chemistry), Ion bombardment |
| Abstract: |
Abstract: The redistribution of implanted 30Si atoms in isotopically purified 28SiO2 thermal oxide is studied as functions of temperature and implanted dose. The results clearly evidence a diffusion enhancement, which is more pronounced at low temperature and high dose. The results are consistent with the simple picture that the redistribution is governed by a Si interstitial diffusion mechanism, which can be slowed down by the presence of residual impurities. [Copyright &y& Elsevier] |
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Copyright of Nuclear Instruments & Methods in Physics Research Section B is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) |
| Database: |
Engineering Source |
