Transfer Processes for Thermally Stable Large-Size TFT Flexible Substrates.
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| Title: | Transfer Processes for Thermally Stable Large-Size TFT Flexible Substrates. |
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| Authors: | Kazushige Takechi1 k.takechi@tradim.or.jp, Toshimasa Eguchi1, Hiroshi Kanoh2, Kenichi Kanemasa3, Shigeyoshi Otsuki1 |
| Source: | IEEE Transactions on Semiconductor Manufacturing. Feb2007, Vol. 20 Issue 1, p20-25. 6p. 4 Diagrams, 2 Charts, 7 Graphs. |
| Subjects: | Plastics, Glass etching, Glass, Thermal stresses, Adhesives |
| Abstract: | We report on glass etching transfer processes to obtain thermally stable large-size TFT flexible substrates on plastic film bases. The transfer processes include high-pressure jet etching that allows us to achieve good etch-rate uniformity over the large area and the utilization of an adhesive having a low elastic modulus. From the experiments and simulations, we find that using an adhesive having a low elastic modulus is effective in reducing bend of the flexible substrate under thermal stresses. The simulations also predict that the reduction in the bend corresponds to the reduction in the principal stress of the adhesive, leading to the suppression of the film peeling off from the thinned glass. Using the transfer processes, we have successfully fabricated thermally stable TFT flexible substrates (300 mm x 350 mm x 200 µm) that have satisfactory electrical characteristics. [ABSTRACT FROM AUTHOR] |
| Copyright of IEEE Transactions on Semiconductor Manufacturing is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 24095513 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Transfer Processes for Thermally Stable Large-Size TFT Flexible Substrates. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Kazushige+Takechi%22">Kazushige Takechi</searchLink><relatesTo>1</relatesTo><i> k.takechi@tradim.or.jp</i><br /><searchLink fieldCode="AR" term="%22Toshimasa+Eguchi%22">Toshimasa Eguchi</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Hiroshi+Kanoh%22">Hiroshi Kanoh</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Kenichi+Kanemasa%22">Kenichi Kanemasa</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Shigeyoshi+Otsuki%22">Shigeyoshi Otsuki</searchLink><relatesTo>1</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22IEEE+Transactions+on+Semiconductor+Manufacturing%22">IEEE Transactions on Semiconductor Manufacturing</searchLink>. Feb2007, Vol. 20 Issue 1, p20-25. 6p. 4 Diagrams, 2 Charts, 7 Graphs. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Plastics%22">Plastics</searchLink><br /><searchLink fieldCode="DE" term="%22Glass+etching%22">Glass etching</searchLink><br /><searchLink fieldCode="DE" term="%22Glass%22">Glass</searchLink><br /><searchLink fieldCode="DE" term="%22Thermal+stresses%22">Thermal stresses</searchLink><br /><searchLink fieldCode="DE" term="%22Adhesives%22">Adhesives</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: We report on glass etching transfer processes to obtain thermally stable large-size TFT flexible substrates on plastic film bases. The transfer processes include high-pressure jet etching that allows us to achieve good etch-rate uniformity over the large area and the utilization of an adhesive having a low elastic modulus. From the experiments and simulations, we find that using an adhesive having a low elastic modulus is effective in reducing bend of the flexible substrate under thermal stresses. The simulations also predict that the reduction in the bend corresponds to the reduction in the principal stress of the adhesive, leading to the suppression of the film peeling off from the thinned glass. Using the transfer processes, we have successfully fabricated thermally stable TFT flexible substrates (300 mm x 350 mm x 200 µm) that have satisfactory electrical characteristics. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of IEEE Transactions on Semiconductor Manufacturing is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1109/TSM.2007.890771 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 6 StartPage: 20 Subjects: – SubjectFull: Plastics Type: general – SubjectFull: Glass etching Type: general – SubjectFull: Glass Type: general – SubjectFull: Thermal stresses Type: general – SubjectFull: Adhesives Type: general Titles: – TitleFull: Transfer Processes for Thermally Stable Large-Size TFT Flexible Substrates. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Kazushige Takechi – PersonEntity: Name: NameFull: Toshimasa Eguchi – PersonEntity: Name: NameFull: Hiroshi Kanoh – PersonEntity: Name: NameFull: Kenichi Kanemasa – PersonEntity: Name: NameFull: Shigeyoshi Otsuki IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 02 Text: Feb2007 Type: published Y: 2007 Identifiers: – Type: issn-print Value: 08946507 Numbering: – Type: volume Value: 20 – Type: issue Value: 1 Titles: – TitleFull: IEEE Transactions on Semiconductor Manufacturing Type: main |
| ResultId | 1 |