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Leakage current and charge trapping behavior in TiO2/SiO2 high-κ gate dielectric stack on 4H-SiC substrate.

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Title: Leakage current and charge trapping behavior in TiO2/SiO2 high-κ gate dielectric stack on 4H-SiC substrate.
Authors: Mahapatra, R.1 rajat.mahapatra@ncl.ac.uk, Chakraborty, Amit K.2, Poolamai, N.1, Horsfall, A.1, Chattopadhyay, S.1, Wright, N. G.1, Coleman, Karl S.2, Coleman, P. G.3, Burrows, C. P.3
Source: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures. Jan/Feb2007, Vol. 25 Issue 1, p217-223. 7p. 1 Black and White Photograph, 1 Diagram, 8 Graphs.
Subjects: Titanium dioxide, Silica, Dielectrics, Metal oxide semiconductors, X-ray photoelectron spectroscopy
Abstract: The TiO2/SiO2 gate dielectric stack on 4H-SiC substrate has been studied as a high-κ gate dielectric for metal-oxide semiconductor devices. X-ray photoelectron spectroscopy confirmed the formation of stoichiometric TiO2 films. The leakage current through the stack layer was investigated and it has been shown to be a double conduction mechanism. At low fields, the current is governed by properties of the interfacial layer with a hopping like conduction mechanism, while at relatively high electric field, carriers are modulated by a trap assisted tunneling mechanism through traps located below the conduction band of TiO2. The current-voltage characteristics, time evolution of charge transport, and capacitance-voltage behaviors under constant voltage stressing suggest the composite effect of electron trapping and positive charge generation in the dielectric stack layer. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
Description
Abstract:The TiO2/SiO2 gate dielectric stack on 4H-SiC substrate has been studied as a high-κ gate dielectric for metal-oxide semiconductor devices. X-ray photoelectron spectroscopy confirmed the formation of stoichiometric TiO2 films. The leakage current through the stack layer was investigated and it has been shown to be a double conduction mechanism. At low fields, the current is governed by properties of the interfacial layer with a hopping like conduction mechanism, while at relatively high electric field, carriers are modulated by a trap assisted tunneling mechanism through traps located below the conduction band of TiO2. The current-voltage characteristics, time evolution of charge transport, and capacitance-voltage behaviors under constant voltage stressing suggest the composite effect of electron trapping and positive charge generation in the dielectric stack layer. [ABSTRACT FROM AUTHOR]
ISSN:10711023
DOI:10.1116/1.2433976