Leakage current and charge trapping behavior in TiO2/SiO2 high-κ gate dielectric stack on 4H-SiC substrate.
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| Title: | Leakage current and charge trapping behavior in TiO |
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| Authors: | Mahapatra, R.1 rajat.mahapatra@ncl.ac.uk, Chakraborty, Amit K.2, Poolamai, N.1, Horsfall, A.1, Chattopadhyay, S.1, Wright, N. G.1, Coleman, Karl S.2, Coleman, P. G.3, Burrows, C. P.3 |
| Source: | Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures. Jan/Feb2007, Vol. 25 Issue 1, p217-223. 7p. 1 Black and White Photograph, 1 Diagram, 8 Graphs. |
| Subjects: | Titanium dioxide, Silica, Dielectrics, Metal oxide semiconductors, X-ray photoelectron spectroscopy |
| Abstract: | The TiO2/SiO2 gate dielectric stack on 4H-SiC substrate has been studied as a high-κ gate dielectric for metal-oxide semiconductor devices. X-ray photoelectron spectroscopy confirmed the formation of stoichiometric TiO2 films. The leakage current through the stack layer was investigated and it has been shown to be a double conduction mechanism. At low fields, the current is governed by properties of the interfacial layer with a hopping like conduction mechanism, while at relatively high electric field, carriers are modulated by a trap assisted tunneling mechanism through traps located below the conduction band of TiO2. The current-voltage characteristics, time evolution of charge transport, and capacitance-voltage behaviors under constant voltage stressing suggest the composite effect of electron trapping and positive charge generation in the dielectric stack layer. [ABSTRACT FROM AUTHOR] |
| Copyright of Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 24368956 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Leakage current and charge trapping behavior in TiO<subscript>2</subscript>/SiO<subscript>2</subscript> high-κ gate dielectric stack on 4H-SiC substrate. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Mahapatra%2C+R%2E%22">Mahapatra, R.</searchLink><relatesTo>1</relatesTo><i> rajat.mahapatra@ncl.ac.uk</i><br /><searchLink fieldCode="AR" term="%22Chakraborty%2C+Amit+K%2E%22">Chakraborty, Amit K.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Poolamai%2C+N%2E%22">Poolamai, N.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Horsfall%2C+A%2E%22">Horsfall, A.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Chattopadhyay%2C+S%2E%22">Chattopadhyay, S.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Wright%2C+N%2E+G%2E%22">Wright, N. G.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Coleman%2C+Karl+S%2E%22">Coleman, Karl S.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Coleman%2C+P%2E+G%2E%22">Coleman, P. G.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Burrows%2C+C%2E+P%2E%22">Burrows, C. P.</searchLink><relatesTo>3</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Vacuum+Science+%26+Technology%3A+Part+B-Microelectronics+%26+Nanometer+Structures%22">Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures</searchLink>. Jan/Feb2007, Vol. 25 Issue 1, p217-223. 7p. 1 Black and White Photograph, 1 Diagram, 8 Graphs. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Titanium+dioxide%22">Titanium dioxide</searchLink><br /><searchLink fieldCode="DE" term="%22Silica%22">Silica</searchLink><br /><searchLink fieldCode="DE" term="%22Dielectrics%22">Dielectrics</searchLink><br /><searchLink fieldCode="DE" term="%22Metal+oxide+semiconductors%22">Metal oxide semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22X-ray+photoelectron+spectroscopy%22">X-ray photoelectron spectroscopy</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: The TiO2/SiO2 gate dielectric stack on 4H-SiC substrate has been studied as a high-κ gate dielectric for metal-oxide semiconductor devices. X-ray photoelectron spectroscopy confirmed the formation of stoichiometric TiO2 films. The leakage current through the stack layer was investigated and it has been shown to be a double conduction mechanism. At low fields, the current is governed by properties of the interfacial layer with a hopping like conduction mechanism, while at relatively high electric field, carriers are modulated by a trap assisted tunneling mechanism through traps located below the conduction band of TiO2. The current-voltage characteristics, time evolution of charge transport, and capacitance-voltage behaviors under constant voltage stressing suggest the composite effect of electron trapping and positive charge generation in the dielectric stack layer. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1116/1.2433976 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 7 StartPage: 217 Subjects: – SubjectFull: Titanium dioxide Type: general – SubjectFull: Silica Type: general – SubjectFull: Dielectrics Type: general – SubjectFull: Metal oxide semiconductors Type: general – SubjectFull: X-ray photoelectron spectroscopy Type: general Titles: – TitleFull: Leakage current and charge trapping behavior in TiO2/SiO2 high-κ gate dielectric stack on 4H-SiC substrate. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Mahapatra, R. – PersonEntity: Name: NameFull: Chakraborty, Amit K. – PersonEntity: Name: NameFull: Poolamai, N. – PersonEntity: Name: NameFull: Horsfall, A. – PersonEntity: Name: NameFull: Chattopadhyay, S. – PersonEntity: Name: NameFull: Wright, N. G. – PersonEntity: Name: NameFull: Coleman, Karl S. – PersonEntity: Name: NameFull: Coleman, P. G. – PersonEntity: Name: NameFull: Burrows, C. P. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 01 Text: Jan/Feb2007 Type: published Y: 2007 Identifiers: – Type: issn-print Value: 10711023 Numbering: – Type: volume Value: 25 – Type: issue Value: 1 Titles: – TitleFull: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures Type: main |
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