Bibliographic Details
| Title: |
STRUCTURAL AND ELECTRICAL CHARACTERIZATION OF HIGH-k STRONTIUM TANTALATE DEPOSITED BY LIQUID DELIVERY MOCVD. |
| Authors: |
Silinskas, M.1 mindaugas.silinskas@et.uni-magdeburg.de, Lisker, M.1, Burte, E. P.1, Veit, P.2 |
| Source: |
Integrated Ferroelectrics. Oct2006, Vol. 86 Issue 1, p31-39. 9p. 1 Black and White Photograph, 1 Chart, 7 Graphs. |
| Subjects: |
Strontium compounds, Metal organic chemical vapor deposition, Crystallization, Annealing of crystals, Dielectrics, Transmission electron microscopy |
| Abstract: |
The strontium tantalate films were prepared by metalorganic chemical vapor deposition using Sr[Ta(OEt)5(OC2H4OMe)]2 precursor. Transmission electron microscopy, X-ray diffraction, and ellipsometry indicated that the as-deposited and the annealed at 800°C films were uniform and amorphous. Significant crystallization takes place only at temperatures of ∼ 1000°C and these films are unhomogeneous and the thickness of the interlayer SiO2 highly increases. Annealing at temperatures about 800°C was found to improve the electrical characteristics (effective dielectric constant up to 40, the leakage current up to 7 · 10- 8 A/cm- 2, and low interface state density value of 8 · 1010 eV- 1cm- 2). [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |
