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STRUCTURAL AND ELECTRICAL CHARACTERIZATION OF HIGH-k STRONTIUM TANTALATE DEPOSITED BY LIQUID DELIVERY MOCVD.

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Title: STRUCTURAL AND ELECTRICAL CHARACTERIZATION OF HIGH-k STRONTIUM TANTALATE DEPOSITED BY LIQUID DELIVERY MOCVD.
Authors: Silinskas, M.1 mindaugas.silinskas@et.uni-magdeburg.de, Lisker, M.1, Burte, E. P.1, Veit, P.2
Source: Integrated Ferroelectrics. Oct2006, Vol. 86 Issue 1, p31-39. 9p. 1 Black and White Photograph, 1 Chart, 7 Graphs.
Subjects: Strontium compounds, Metal organic chemical vapor deposition, Crystallization, Annealing of crystals, Dielectrics, Transmission electron microscopy
Abstract: The strontium tantalate films were prepared by metalorganic chemical vapor deposition using Sr[Ta(OEt)5(OC2H4OMe)]2 precursor. Transmission electron microscopy, X-ray diffraction, and ellipsometry indicated that the as-deposited and the annealed at 800°C films were uniform and amorphous. Significant crystallization takes place only at temperatures of ∼ 1000°C and these films are unhomogeneous and the thickness of the interlayer SiO2 highly increases. Annealing at temperatures about 800°C was found to improve the electrical characteristics (effective dielectric constant up to 40, the leakage current up to 7 · 10- 8 A/cm- 2, and low interface state density value of 8 · 1010 eV- 1cm- 2). [ABSTRACT FROM AUTHOR]
Copyright of Integrated Ferroelectrics is the property of Taylor & Francis Ltd and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: STRUCTURAL AND ELECTRICAL CHARACTERIZATION OF HIGH-k STRONTIUM TANTALATE DEPOSITED BY LIQUID DELIVERY MOCVD.
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  Data: <searchLink fieldCode="AR" term="%22Silinskas%2C+M%2E%22">Silinskas, M.</searchLink><relatesTo>1</relatesTo><i> mindaugas.silinskas@et.uni-magdeburg.de</i><br /><searchLink fieldCode="AR" term="%22Lisker%2C+M%2E%22">Lisker, M.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Burte%2C+E%2E+P%2E%22">Burte, E. P.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Veit%2C+P%2E%22">Veit, P.</searchLink><relatesTo>2</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Integrated+Ferroelectrics%22">Integrated Ferroelectrics</searchLink>. Oct2006, Vol. 86 Issue 1, p31-39. 9p. 1 Black and White Photograph, 1 Chart, 7 Graphs.
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  Data: <searchLink fieldCode="DE" term="%22Strontium+compounds%22">Strontium compounds</searchLink><br /><searchLink fieldCode="DE" term="%22Metal+organic+chemical+vapor+deposition%22">Metal organic chemical vapor deposition</searchLink><br /><searchLink fieldCode="DE" term="%22Crystallization%22">Crystallization</searchLink><br /><searchLink fieldCode="DE" term="%22Annealing+of+crystals%22">Annealing of crystals</searchLink><br /><searchLink fieldCode="DE" term="%22Dielectrics%22">Dielectrics</searchLink><br /><searchLink fieldCode="DE" term="%22Transmission+electron+microscopy%22">Transmission electron microscopy</searchLink>
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  Data: The strontium tantalate films were prepared by metalorganic chemical vapor deposition using Sr[Ta(OEt)5(OC2H4OMe)]2 precursor. Transmission electron microscopy, X-ray diffraction, and ellipsometry indicated that the as-deposited and the annealed at 800°C films were uniform and amorphous. Significant crystallization takes place only at temperatures of ∼ 1000°C and these films are unhomogeneous and the thickness of the interlayer SiO2 highly increases. Annealing at temperatures about 800°C was found to improve the electrical characteristics (effective dielectric constant up to 40, the leakage current up to 7 · 10- 8 A/cm- 2, and low interface state density value of 8 · 1010 eV- 1cm- 2). [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
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  Data: <i>Copyright of Integrated Ferroelectrics is the property of Taylor & Francis Ltd and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1080/10584580601085636
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        Text: English
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        PageCount: 9
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      – SubjectFull: Strontium compounds
        Type: general
      – SubjectFull: Metal organic chemical vapor deposition
        Type: general
      – SubjectFull: Crystallization
        Type: general
      – SubjectFull: Annealing of crystals
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      – SubjectFull: Dielectrics
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      – SubjectFull: Transmission electron microscopy
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      – TitleFull: STRUCTURAL AND ELECTRICAL CHARACTERIZATION OF HIGH-k STRONTIUM TANTALATE DEPOSITED BY LIQUID DELIVERY MOCVD.
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              Text: Oct2006
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