Growth and optical properties of phosphorus-doped ZnO nanowires

Saved in:
Bibliographic Details
Title: Growth and optical properties of phosphorus-doped ZnO nanowires
Authors: Kim, D.S.1 dskim@mpi-halle.de, Fallert, J.2, Lotnyk, A.1, Scholz, R.1, Pippel, E.1, Senz, S.1, Kalt, H.2, Gösele, U.1, Zacharias, M.1,3
Source: Solid State Communications. Sep2007, Vol. 143 Issue 11/12, p570-573. 4p.
Subjects: Semiconductor doping, Zinc compounds, Nanowires, Solid state physics
Abstract: Abstract: Single-crystal phosphorus-doped ZnO nanowires were synthesized by using a single-source precursor-based vapor transport method. The photoluminescence spectra of phosphorus-doped ZnO nanowires and undoped nanowires are compared. While both show several shallow bound exciton complexes, the phosphorus-doped nanowires reveal an additional distinct emission feature at 3.316 eV. Additionally, the time-resolved PL measurements were conducted to characterize the recombination dynamics. [Copyright &y& Elsevier]
Copyright of Solid State Communications is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
Be the first to leave a comment!
You must be logged in first