Bibliographic Details
| Title: |
High-power and long-lifetime InGaN blue–violet laser diodes grown by molecular beam epitaxy. |
| Authors: |
Tan, W. S.1, Kauer, M.1 matthias.kauer@sharp.co.uk, Hooper, S. E.1, Barnes, J. M.1, Rossetti, M.1, Smeeton, T. M.1, Bousquet, V.1, Heffernan, J.1 |
| Source: |
Electronics Letters (Institution of Engineering & Technology). 2/28/2008, Vol. 44 Issue 5, p351-353. 3p. 3 Graphs. |
| Subjects: |
Quantum wells, Lasers, Diodes, Molecular beams, Optoelectronic devices, Optoelectronics |
| Abstract: |
InGaN 405 nm multiple quantum well laser diodes grown by molecular beam epitaxy (MBE) with a continuous-wave (CW) lifetime of up to 42 h are reported. The CW threshold current density of the ridge waveguide laser diodes is 3.6 kA/cm2 and the slope efficiency for uncoated facets is 0.42 W/A per facet with a maximum CW output power of 45 mW per facet. Statistical variation of CW lifetime with dissipated power is presented for MBE-grown laser diodes from five different wafers. [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |
