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High-power and long-lifetime InGaN blue–violet laser diodes grown by molecular beam epitaxy.

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Title: High-power and long-lifetime InGaN blue–violet laser diodes grown by molecular beam epitaxy.
Authors: Tan, W. S.1, Kauer, M.1 matthias.kauer@sharp.co.uk, Hooper, S. E.1, Barnes, J. M.1, Rossetti, M.1, Smeeton, T. M.1, Bousquet, V.1, Heffernan, J.1
Source: Electronics Letters (Institution of Engineering & Technology). 2/28/2008, Vol. 44 Issue 5, p351-353. 3p. 3 Graphs.
Subjects: Quantum wells, Lasers, Diodes, Molecular beams, Optoelectronic devices, Optoelectronics
Abstract: InGaN 405 nm multiple quantum well laser diodes grown by molecular beam epitaxy (MBE) with a continuous-wave (CW) lifetime of up to 42 h are reported. The CW threshold current density of the ridge waveguide laser diodes is 3.6 kA/cm2 and the slope efficiency for uncoated facets is 0.42 W/A per facet with a maximum CW output power of 45 mW per facet. Statistical variation of CW lifetime with dissipated power is presented for MBE-grown laser diodes from five different wafers. [ABSTRACT FROM AUTHOR]
Copyright of Electronics Letters (Institution of Engineering & Technology) is the property of Institution of Engineering & Technology and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 30102175
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PubType: Academic Journal
PubTypeId: academicJournal
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  Data: High-power and long-lifetime InGaN blue–violet laser diodes grown by molecular beam epitaxy.
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  Data: <searchLink fieldCode="AR" term="%22Tan%2C+W%2E+S%2E%22">Tan, W. S.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Kauer%2C+M%2E%22">Kauer, M.</searchLink><relatesTo>1</relatesTo><i> matthias.kauer@sharp.co.uk</i><br /><searchLink fieldCode="AR" term="%22Hooper%2C+S%2E+E%2E%22">Hooper, S. E.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Barnes%2C+J%2E+M%2E%22">Barnes, J. M.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Rossetti%2C+M%2E%22">Rossetti, M.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Smeeton%2C+T%2E+M%2E%22">Smeeton, T. M.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Bousquet%2C+V%2E%22">Bousquet, V.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Heffernan%2C+J%2E%22">Heffernan, J.</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Electronics+Letters+%28Institution+of+Engineering+%26+Technology%29%22">Electronics Letters (Institution of Engineering & Technology)</searchLink>. 2/28/2008, Vol. 44 Issue 5, p351-353. 3p. 3 Graphs.
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  Data: <searchLink fieldCode="DE" term="%22Quantum+wells%22">Quantum wells</searchLink><br /><searchLink fieldCode="DE" term="%22Lasers%22">Lasers</searchLink><br /><searchLink fieldCode="DE" term="%22Diodes%22">Diodes</searchLink><br /><searchLink fieldCode="DE" term="%22Molecular+beams%22">Molecular beams</searchLink><br /><searchLink fieldCode="DE" term="%22Optoelectronic+devices%22">Optoelectronic devices</searchLink><br /><searchLink fieldCode="DE" term="%22Optoelectronics%22">Optoelectronics</searchLink>
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  Label: Abstract
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  Data: InGaN 405 nm multiple quantum well laser diodes grown by molecular beam epitaxy (MBE) with a continuous-wave (CW) lifetime of up to 42 h are reported. The CW threshold current density of the ridge waveguide laser diodes is 3.6 kA/cm2 and the slope efficiency for uncoated facets is 0.42 W/A per facet with a maximum CW output power of 45 mW per facet. Statistical variation of CW lifetime with dissipated power is presented for MBE-grown laser diodes from five different wafers. [ABSTRACT FROM AUTHOR]
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  Data: <i>Copyright of Electronics Letters (Institution of Engineering & Technology) is the property of Institution of Engineering & Technology and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1049/el:20083456
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        Text: English
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      – SubjectFull: Diodes
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      – SubjectFull: Molecular beams
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      – TitleFull: High-power and long-lifetime InGaN blue–violet laser diodes grown by molecular beam epitaxy.
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              Text: 2/28/2008
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