View in EDS

Mechanism of Growth of the Ge Wetting Layer Upon Exposure of Si(100)-2 x 1 to GeH4.

Saved in:
Bibliographic Details
Title: Mechanism of Growth of the Ge Wetting Layer Upon Exposure of Si(100)-2 x 1 to GeH4.
Authors: Chie-Sheng Liu1, Li-Wei Chou1, Lu-Sheng Hong1 hongls@mail.ntust.edu.tw, Jyh-Chiang Jiang1 jcjiang@mail.ntust.edu.tw
Source: Journal of the American Chemical Society. 4/23/2008, Vol. 130 Issue 16, p5440-5442. 3p. 2 Diagrams.
Subjects: Germanium, Silicon, Wetting, X-ray photoelectron spectroscopy, Reflection high energy electron diffraction, Atomic force microscopy, Hydrogen mitigation
Abstract: The article discusses a study which determines the initial reaction kinetics for germanium (Ge) deposition after exposing a silicon(100)-2 x 1 surface to Ge tetrahydride in a ultrahigh vacuum/chemical vapor deposition system. The study used x-ray photoelectron spectroscopy, reflection high-energy electron diffraction and atomic force microscopy. The opening of the silicon dimer following a hydrogen atom migration would be the rate-controlling step for the growth of the Ge wetting layer.
Database: Engineering Source
Description
Abstract:The article discusses a study which determines the initial reaction kinetics for germanium (Ge) deposition after exposing a silicon(100)-2 x 1 surface to Ge tetrahydride in a ultrahigh vacuum/chemical vapor deposition system. The study used x-ray photoelectron spectroscopy, reflection high-energy electron diffraction and atomic force microscopy. The opening of the silicon dimer following a hydrogen atom migration would be the rate-controlling step for the growth of the Ge wetting layer.
ISSN:00027863
DOI:10.1021/ja710802s