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Mechanism of Growth of the Ge Wetting Layer Upon Exposure of Si(100)-2 x 1 to GeH4.

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Title: Mechanism of Growth of the Ge Wetting Layer Upon Exposure of Si(100)-2 x 1 to GeH4.
Authors: Chie-Sheng Liu1, Li-Wei Chou1, Lu-Sheng Hong1 hongls@mail.ntust.edu.tw, Jyh-Chiang Jiang1 jcjiang@mail.ntust.edu.tw
Source: Journal of the American Chemical Society. 4/23/2008, Vol. 130 Issue 16, p5440-5442. 3p. 2 Diagrams.
Subjects: Germanium, Silicon, Wetting, X-ray photoelectron spectroscopy, Reflection high energy electron diffraction, Atomic force microscopy, Hydrogen mitigation
Abstract: The article discusses a study which determines the initial reaction kinetics for germanium (Ge) deposition after exposing a silicon(100)-2 x 1 surface to Ge tetrahydride in a ultrahigh vacuum/chemical vapor deposition system. The study used x-ray photoelectron spectroscopy, reflection high-energy electron diffraction and atomic force microscopy. The opening of the silicon dimer following a hydrogen atom migration would be the rate-controlling step for the growth of the Ge wetting layer.
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 31880795
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Mechanism of Growth of the Ge Wetting Layer Upon Exposure of Si(100)-2 x 1 to GeH<subscript>4</subscript>.
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  Data: <searchLink fieldCode="AR" term="%22Chie-Sheng+Liu%22">Chie-Sheng Liu</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Li-Wei+Chou%22">Li-Wei Chou</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Lu-Sheng+Hong%22">Lu-Sheng Hong</searchLink><relatesTo>1</relatesTo><i> hongls@mail.ntust.edu.tw</i><br /><searchLink fieldCode="AR" term="%22Jyh-Chiang+Jiang%22">Jyh-Chiang Jiang</searchLink><relatesTo>1</relatesTo><i> jcjiang@mail.ntust.edu.tw</i>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+the+American+Chemical+Society%22">Journal of the American Chemical Society</searchLink>. 4/23/2008, Vol. 130 Issue 16, p5440-5442. 3p. 2 Diagrams.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Germanium%22">Germanium</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon%22">Silicon</searchLink><br /><searchLink fieldCode="DE" term="%22Wetting%22">Wetting</searchLink><br /><searchLink fieldCode="DE" term="%22X-ray+photoelectron+spectroscopy%22">X-ray photoelectron spectroscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Reflection+high+energy+electron+diffraction%22">Reflection high energy electron diffraction</searchLink><br /><searchLink fieldCode="DE" term="%22Atomic+force+microscopy%22">Atomic force microscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Hydrogen+mitigation%22">Hydrogen mitigation</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: The article discusses a study which determines the initial reaction kinetics for germanium (Ge) deposition after exposing a silicon(100)-2 x 1 surface to Ge tetrahydride in a ultrahigh vacuum/chemical vapor deposition system. The study used x-ray photoelectron spectroscopy, reflection high-energy electron diffraction and atomic force microscopy. The opening of the silicon dimer following a hydrogen atom migration would be the rate-controlling step for the growth of the Ge wetting layer.
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1021/ja710802s
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 3
        StartPage: 5440
    Subjects:
      – SubjectFull: Germanium
        Type: general
      – SubjectFull: Silicon
        Type: general
      – SubjectFull: Wetting
        Type: general
      – SubjectFull: X-ray photoelectron spectroscopy
        Type: general
      – SubjectFull: Reflection high energy electron diffraction
        Type: general
      – SubjectFull: Atomic force microscopy
        Type: general
      – SubjectFull: Hydrogen mitigation
        Type: general
    Titles:
      – TitleFull: Mechanism of Growth of the Ge Wetting Layer Upon Exposure of Si(100)-2 x 1 to GeH4.
        Type: main
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      – PersonEntity:
          Name:
            NameFull: Chie-Sheng Liu
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          Name:
            NameFull: Li-Wei Chou
      – PersonEntity:
          Name:
            NameFull: Lu-Sheng Hong
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            NameFull: Jyh-Chiang Jiang
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          Dates:
            – D: 23
              M: 04
              Text: 4/23/2008
              Type: published
              Y: 2008
          Identifiers:
            – Type: issn-print
              Value: 00027863
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            – Type: volume
              Value: 130
            – Type: issue
              Value: 16
          Titles:
            – TitleFull: Journal of the American Chemical Society
              Type: main
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