View in EDS

Crystallization kinetics of Ga–Sb–Te films for phase change memory

Saved in:
Bibliographic Details
Title: Crystallization kinetics of Ga–Sb–Te films for phase change memory
Authors: Cheng, Huai-Yu1 d927503@alumni.nthu.edu.tw, Kao, Kin-Fu1 g943503@oz.nthu.edu.tw, Lee, Chain-Ming2 chainme@itri.org.tw, Chin, Tsung-Shune3 tschin@mx.nthu.edu.tw
Source: Thin Solid Films. Jun2008, Vol. 516 Issue 16, p5513-5517. 5p.
Subjects: Crystallization, Crystal growth, Thin films, Thermal properties
Abstract: Abstract: Ga–Sb–Te ternary thin films were prepared by co-sputtering using targets GaSb and Sb8Te2. Crystallization processes of these films were studied by measuring the temperature-dependent electrical resistance during non-isothermal heating. The activation energy (E a), rate factor (K o), and kinetics exponent (n) were deduced from Kissinger and Ozawa''s plots, respectively. The crystallization temperatures (T x =108∼319°C) increase with increasing GaSb contents. The activation energy (1.82∼7.52 eV) increases with increasing Ga content until 31.6 at.% then it decreases. The crystallization mechanisms of compositions A∼D (Ga17∼32Sb71∼62Te12∼6), as evidenced from n values, are nuclei formation and subsequent crystal growth; the nucleation rate decreases with grain growth. While composition E (Ga38.2Sb57.7Te4.1) reveals an n value lower than 1.5, it implies the one-dimensional crystal growth from the nuclei. The crystallization time of each composition was evaluated using JMA equation using all derived kinetics parameters. Composition C (Ga26.4Sb65.2Te8.4), showing the shortest crystallization time, is suggested for phase change RAM applications. [Copyright &y& Elsevier]
Copyright of Thin Solid Films is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
Description
Abstract:Abstract: Ga–Sb–Te ternary thin films were prepared by co-sputtering using targets GaSb and Sb8Te2. Crystallization processes of these films were studied by measuring the temperature-dependent electrical resistance during non-isothermal heating. The activation energy (E a), rate factor (K o), and kinetics exponent (n) were deduced from Kissinger and Ozawa''s plots, respectively. The crystallization temperatures (T x =108∼319°C) increase with increasing GaSb contents. The activation energy (1.82∼7.52 eV) increases with increasing Ga content until 31.6 at.% then it decreases. The crystallization mechanisms of compositions A∼D (Ga17∼32Sb71∼62Te12∼6), as evidenced from n values, are nuclei formation and subsequent crystal growth; the nucleation rate decreases with grain growth. While composition E (Ga38.2Sb57.7Te4.1) reveals an n value lower than 1.5, it implies the one-dimensional crystal growth from the nuclei. The crystallization time of each composition was evaluated using JMA equation using all derived kinetics parameters. Composition C (Ga26.4Sb65.2Te8.4), showing the shortest crystallization time, is suggested for phase change RAM applications. [Copyright &y& Elsevier]
ISSN:00406090
DOI:10.1016/j.tsf.2007.07.100