Bibliographic Details
| Title: |
Advanced Defect Characterization by STEM Analysis. |
| Authors: |
Subramanian, Sam1 Sam.Subramanian@freescale.com, Rai, Raghaw, Kiem Ly, Chrastecky, Tony, Mulder, Randy, Harber, Kieth |
| Source: |
Electronic Device Failure Analysis. May2008, Vol. 10 Issue 2, p20-28. 6p. |
| Subjects: |
Semiconductor characterization, Scanning transmission electron microscopy, Transmission electron microscopy, Semiconductor defects, Failure analysis, Quality control, Optical diffraction, Surface defects, Semiconductor industry |
| Abstract: |
The article provides information on the advantages of scanning transmission electron microscopy (STEM) for semiconductor defect characterization. The author stated that useful data for complete defect characterization of samples that are encountered in failure analysis (FA) of semiconductor devices are generated by a complementary approach of STEM and conventional transmission electron microscopy (TEM). Meanwhile, the advantages of Z-contrast STEM imaging can be used to image subtle defects that are difficult to characterize by conventional diffraction and phase-contrast imaging. |
| Database: |
Engineering Source |
