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Advanced Defect Characterization by STEM Analysis.

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Title: Advanced Defect Characterization by STEM Analysis.
Authors: Subramanian, Sam1 Sam.Subramanian@freescale.com, Rai, Raghaw, Kiem Ly, Chrastecky, Tony, Mulder, Randy, Harber, Kieth
Source: Electronic Device Failure Analysis. May2008, Vol. 10 Issue 2, p20-28. 6p.
Subjects: Semiconductor characterization, Scanning transmission electron microscopy, Transmission electron microscopy, Semiconductor defects, Failure analysis, Quality control, Optical diffraction, Surface defects, Semiconductor industry
Abstract: The article provides information on the advantages of scanning transmission electron microscopy (STEM) for semiconductor defect characterization. The author stated that useful data for complete defect characterization of samples that are encountered in failure analysis (FA) of semiconductor devices are generated by a complementary approach of STEM and conventional transmission electron microscopy (TEM). Meanwhile, the advantages of Z-contrast STEM imaging can be used to image subtle defects that are difficult to characterize by conventional diffraction and phase-contrast imaging.
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 33012919
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Advanced Defect Characterization by STEM Analysis.
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  Data: <searchLink fieldCode="JN" term="%22Electronic+Device+Failure+Analysis%22">Electronic Device Failure Analysis</searchLink>. May2008, Vol. 10 Issue 2, p20-28. 6p.
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  Data: <searchLink fieldCode="DE" term="%22Semiconductor+characterization%22">Semiconductor characterization</searchLink><br /><searchLink fieldCode="DE" term="%22Scanning+transmission+electron+microscopy%22">Scanning transmission electron microscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Transmission+electron+microscopy%22">Transmission electron microscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+defects%22">Semiconductor defects</searchLink><br /><searchLink fieldCode="DE" term="%22Failure+analysis%22">Failure analysis</searchLink><br /><searchLink fieldCode="DE" term="%22Quality+control%22">Quality control</searchLink><br /><searchLink fieldCode="DE" term="%22Optical+diffraction%22">Optical diffraction</searchLink><br /><searchLink fieldCode="DE" term="%22Surface+defects%22">Surface defects</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+industry%22">Semiconductor industry</searchLink>
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  Label: Abstract
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  Data: The article provides information on the advantages of scanning transmission electron microscopy (STEM) for semiconductor defect characterization. The author stated that useful data for complete defect characterization of samples that are encountered in failure analysis (FA) of semiconductor devices are generated by a complementary approach of STEM and conventional transmission electron microscopy (TEM). Meanwhile, the advantages of Z-contrast STEM imaging can be used to image subtle defects that are difficult to characterize by conventional diffraction and phase-contrast imaging.
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=33012919
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.31399/asm.edfa.2008-2.p020
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      – Code: eng
        Text: English
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      Pagination:
        PageCount: 6
        StartPage: 20
    Subjects:
      – SubjectFull: Semiconductor characterization
        Type: general
      – SubjectFull: Scanning transmission electron microscopy
        Type: general
      – SubjectFull: Transmission electron microscopy
        Type: general
      – SubjectFull: Semiconductor defects
        Type: general
      – SubjectFull: Failure analysis
        Type: general
      – SubjectFull: Quality control
        Type: general
      – SubjectFull: Optical diffraction
        Type: general
      – SubjectFull: Surface defects
        Type: general
      – SubjectFull: Semiconductor industry
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      – TitleFull: Advanced Defect Characterization by STEM Analysis.
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            NameFull: Mulder, Randy
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            NameFull: Harber, Kieth
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            – D: 01
              M: 05
              Text: May2008
              Type: published
              Y: 2008
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              Value: 15370755
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              Value: 10
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              Value: 2
          Titles:
            – TitleFull: Electronic Device Failure Analysis
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