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Structural and chemical analyses of sputtered In x S y buffer layers in Cu(In,Ga)Se2 thin-film solar cells

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Title: Structural and chemical analyses of sputtered In x S y buffer layers in Cu(In,Ga)Se2 thin-film solar cells
Authors: Abou-Ras, D.1,2 daniel.abou-ras@helmholtz-berlin.de, Kostorz, G.1, Hariskos, D.3, Menner, R.3, Powalla, M.3, Schorr, S.4, Tiwari, A.N.2,5
Source: Thin Solid Films. Feb2009, Vol. 517 Issue 8, p2792-2798. 7p.
Subjects: Sulfides, Sputtering (Physics), Structural analysis (Science), Copper compounds, Thin films, Solar cells, Substrates (Materials science), Transmission electron microscopy
Abstract: Abstract: Sputtered In x S y layers deposited on borosilicate glass and Si at substrate temperatures ranging from about 60 °C to 340 °C were analyzed by means of X-ray diffraction, energy-dispersive X-ray spectrometry, and optical transmission and reflection measurements. With increasing substrate temperature, the In x S y layers exhibit increasing sulfur concentration and also increasing absorption-edge energies. In x S y layers on Cu(In,Ga)Se2(CIGS)/Mo/glass stacks were additionally studied by scanning and transmission electron microscopy. With increasing substrate temperature, Cu, Ga, and In interdiffusion between CIGS and In x S y becomes more enhanced. At 340 °C, CuIn5S8 forms instead of In x S y . The CuIn5S8 formation at elevated temperatures may be the reason for the very low efficiency of solar cells with indium sulfide buffers deposited at temperatures above about 250 °C by various techniques. [Copyright &y& Elsevier]
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Database: Engineering Source
Description
Abstract:Abstract: Sputtered In x S y layers deposited on borosilicate glass and Si at substrate temperatures ranging from about 60 °C to 340 °C were analyzed by means of X-ray diffraction, energy-dispersive X-ray spectrometry, and optical transmission and reflection measurements. With increasing substrate temperature, the In x S y layers exhibit increasing sulfur concentration and also increasing absorption-edge energies. In x S y layers on Cu(In,Ga)Se2(CIGS)/Mo/glass stacks were additionally studied by scanning and transmission electron microscopy. With increasing substrate temperature, Cu, Ga, and In interdiffusion between CIGS and In x S y becomes more enhanced. At 340 °C, CuIn5S8 forms instead of In x S y . The CuIn5S8 formation at elevated temperatures may be the reason for the very low efficiency of solar cells with indium sulfide buffers deposited at temperatures above about 250 °C by various techniques. [Copyright &y& Elsevier]
ISSN:00406090
DOI:10.1016/j.tsf.2008.10.138