Structural and chemical analyses of sputtered In x S y buffer layers in Cu(In,Ga)Se2 thin-film solar cells

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Title: Structural and chemical analyses of sputtered In x S y buffer layers in Cu(In,Ga)Se2 thin-film solar cells
Authors: Abou-Ras, D.1,2 daniel.abou-ras@helmholtz-berlin.de, Kostorz, G.1, Hariskos, D.3, Menner, R.3, Powalla, M.3, Schorr, S.4, Tiwari, A.N.2,5
Source: Thin Solid Films. Feb2009, Vol. 517 Issue 8, p2792-2798. 7p.
Subjects: Sulfides, Sputtering (Physics), Structural analysis (Science), Copper compounds, Thin films, Solar cells, Substrates (Materials science), Transmission electron microscopy
Abstract: Abstract: Sputtered In x S y layers deposited on borosilicate glass and Si at substrate temperatures ranging from about 60 °C to 340 °C were analyzed by means of X-ray diffraction, energy-dispersive X-ray spectrometry, and optical transmission and reflection measurements. With increasing substrate temperature, the In x S y layers exhibit increasing sulfur concentration and also increasing absorption-edge energies. In x S y layers on Cu(In,Ga)Se2(CIGS)/Mo/glass stacks were additionally studied by scanning and transmission electron microscopy. With increasing substrate temperature, Cu, Ga, and In interdiffusion between CIGS and In x S y becomes more enhanced. At 340 °C, CuIn5S8 forms instead of In x S y . The CuIn5S8 formation at elevated temperatures may be the reason for the very low efficiency of solar cells with indium sulfide buffers deposited at temperatures above about 250 °C by various techniques. [Copyright &y& Elsevier]
Copyright of Thin Solid Films is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: <searchLink fieldCode="JN" term="%22Thin+Solid+Films%22">Thin Solid Films</searchLink>. Feb2009, Vol. 517 Issue 8, p2792-2798. 7p.
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  Data: <searchLink fieldCode="DE" term="%22Sulfides%22">Sulfides</searchLink><br /><searchLink fieldCode="DE" term="%22Sputtering+%28Physics%29%22">Sputtering (Physics)</searchLink><br /><searchLink fieldCode="DE" term="%22Structural+analysis+%28Science%29%22">Structural analysis (Science)</searchLink><br /><searchLink fieldCode="DE" term="%22Copper+compounds%22">Copper compounds</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Solar+cells%22">Solar cells</searchLink><br /><searchLink fieldCode="DE" term="%22Substrates+%28Materials+science%29%22">Substrates (Materials science)</searchLink><br /><searchLink fieldCode="DE" term="%22Transmission+electron+microscopy%22">Transmission electron microscopy</searchLink>
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  Data: Abstract: Sputtered In x S y layers deposited on borosilicate glass and Si at substrate temperatures ranging from about 60 °C to 340 °C were analyzed by means of X-ray diffraction, energy-dispersive X-ray spectrometry, and optical transmission and reflection measurements. With increasing substrate temperature, the In x S y layers exhibit increasing sulfur concentration and also increasing absorption-edge energies. In x S y layers on Cu(In,Ga)Se2(CIGS)/Mo/glass stacks were additionally studied by scanning and transmission electron microscopy. With increasing substrate temperature, Cu, Ga, and In interdiffusion between CIGS and In x S y becomes more enhanced. At 340 °C, CuIn5S8 forms instead of In x S y . The CuIn5S8 formation at elevated temperatures may be the reason for the very low efficiency of solar cells with indium sulfide buffers deposited at temperatures above about 250 °C by various techniques. [Copyright &y& Elsevier]
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  Data: <i>Copyright of Thin Solid Films is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1016/j.tsf.2008.10.138
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        Text: English
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      – SubjectFull: Copper compounds
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      – SubjectFull: Substrates (Materials science)
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      – SubjectFull: Transmission electron microscopy
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      – TitleFull: Structural and chemical analyses of sputtered In x S y buffer layers in Cu(In,Ga)Se2 thin-film solar cells
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              Text: Feb2009
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